Design For the design of the amplifiers, consider a very large load resistance RL. Use a 15 V DC source and a sinusoidal input signal of 200 mVpp and 1 kHz. Design a voltage amplification stage with a common emitter amplifier that meet the following specifications: Voltage gain of 15 (Av2 ≅ 15) Input impedance greater than or equal to 10 times Zo1 (Zi2 ≥ 10 Zo1). Low cut frequency less than or equal to 20 Hz (fcb2 ≤ 20 Hz). Maximum symmetric excursion. Use a 2N2222A (NTE123A) transistor. Also, determine the value of the impedance output (Zo2) of the designed circuit.
Design For the design of the amplifiers, consider a very large load resistance RL. Use a 15 V DC source and a sinusoidal input signal of 200 mVpp and 1 kHz. Design a voltage amplification stage with a common emitter amplifier that meet the following specifications: Voltage gain of 15 (Av2 ≅ 15) Input impedance greater than or equal to 10 times Zo1 (Zi2 ≥ 10 Zo1). Low cut frequency less than or equal to 20 Hz (fcb2 ≤ 20 Hz). Maximum symmetric excursion. Use a 2N2222A (NTE123A) transistor. Also, determine the value of the impedance output (Zo2) of the designed circuit.
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Design
For the design of the amplifiers, consider a very large load resistance RL.
Use a 15 V DC source and a sinusoidal input signal of 200 mVpp and 1 kHz.
Design a voltage amplification stage with a common emitter amplifier that
meet the following specifications:
Voltage gain of 15 (Av2 ≅ 15)
Input impedance greater than or equal to 10 times Zo1 (Zi2 ≥ 10 Zo1).
Low cut frequency less than or equal to 20 Hz (fcb2 ≤ 20 Hz).
Maximum symmetric excursion.
Use a 2N2222A (NTE123A) transistor.
Also, determine the value of the impedance output (Zo2) of the designed circuit.
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