Chapter13: Kinetic Methods
Section: Chapter Questions
Problem 6P
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Question
An article in Solid State Technology, "Orthogonal Design of Process Optimization and Its Application to Plasma Etching" by G.Z. Yin and D.W. Jillie (May, 1987) describes an experiment to determine the effect of C2F6 flow rate on the uniformity of the etch on a silicon wafer used in integrated circuit manufacturing. Data for two flow rates are as follows:
C2F6 |
Uniformity Observation |
|||||
(SCCM) |
1 |
2 |
3 |
4 |
5 |
6 |
125 |
2.7 |
4.6 |
2.6 |
3.0 |
3.2 |
3.8 |
200 |
4.6 |
3.4 |
2.9 |
3.5 |
4.1 |
5.1 |
C2F6 |
Uniformity Observation |
|||||
(SCCM) |
1 |
2 |
3 |
4 |
5 |
6 |
125 |
2.7 |
4.6 |
2.6 |
3.0 |
3.2 |
3.8 |
200 |
4.6 |
3.4 |
2.9 |
3.5 |
4.1 |
5.1 |
(a) Does the C2F6 flow rate affect average etch uniformity? Use = 0.05.
(b) What is the P-value for the test in part (a)?
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