Hint:Although the band gap and the densityof states vary with temperature, thosevariations are much slower compared to theexponential factor e^(-Eg/2KT). Please givesome insight to this problem and go over theequations and steps needed to solve for theMax temperature.Thank you . A GaAs device is doped with a donor concentration of 3 x 10¹5 cm-3. For the deviceto operate properly, the intrinsic carrier concentration must remain less than 5 percentof the total electron concentration. What is the maximum temperature that the devicemay operate?

Step 1: Calculate the intrinsic carrier concentration at a given temperature.The intrinsic carrier…

Hint:Although the band gap and the density of states vary with temperature, those variations are much slower compared to the exponential factor e^(-Eg/2KT). Please give some insight to this problem and go over the equations and steps needed to solve for the Max temperature. Thank you

Hint:Although the band gap and the density of states vary with temperature, those variations are much slower compared to the exponential factor e^(-Eg/2KT). Please give some insight to this problem and go over the equations and steps needed to solve for the Max temperature. Thank you

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 9P

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Question

A GaAs device is doped with a donor concentration of 3 x 10¹5 cm-3. For the device
to operate properly, the intrinsic carrier concentration must remain less than 5 percent
of the total electron concentration. What is the maximum temperature that the device
may operate?

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