Answered: B) The conductivity for n-side is 1500…

B) The conductivity for n-side is 1500 s/m and for p-side is 400s/m in pn junction, while the conductivity of the pure silicon is4 x 10-s/m. The barrier potential at 300°K, if the P = 2.4p is: %3D

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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B) The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn
junction, while the conductivity of the pure silicon is4 x 10- s/m. The
barrier potential at 300°K, if the H = 2.4up is:

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