Question 2 QUESTION 1If we have silicon at 300K with 10 microns of p-type doping of 4.26*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside thedepletion region on the n-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 65 microns. Assume p andn mobilities are 500 & 1500 cm^2/(V*s) respectively.QUESTION 2If we have silicon at 300K with 10 microns of p-type doping of 1.8*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside thedepletion region on the p-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 62 microns. Assume p andn mobilities are 500 & 1500 cm^2/(V*s) respectively.QUESTION 3What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 6.3*10^14/cc, 1000 times more donordoping, and forward bias of 0.54 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to twosignificant digits with fixed point notation.QUESTION 4How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)^2 area and doped with acceptors and donors at 6.1*10^15/cc, andforward bias of 0.57 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significantdigits with fixed point notation.Click Save and Submit to save and submit. Click Save All Answers to save all answers.

the following data is given in the question np=1.8×1018/ccμp=500nn=1.8×1015/cc (1000 times…

If we have silicon at 300K with 10 microns of p-type doping of 1.8*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the depletion region on the p-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 62 microns. Assume p and n mobilities are 500 & 1500 cm^2/(V's) respectively.

If we have silicon at 300K with 10 microns of p-type doping of 1.8*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the depletion region on the p-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 62 microns. Assume p and n mobilities are 500 & 1500 cm^2/(V's) respectively.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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