2. (a) Using the diode equation, determine the diode current at 20°C for a silicon diode with =60 nA and at applied forward bias of 0.62 V.4 (b) Repeat Problem 2(a) for a temperature = 100°C. Assume that I, has increased to 5 µA. (c) () Determine the diode current at 20°C for a silicon diode with I, = 0.1 A, at a reverse-bias potential of 10 V. (i) Is the result expected? Why?
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- Using Schockley’s equation;i. Determine the diode current at 20 ◦C, for a silicon diode with Is = 50 nA and an applied forward bias of 0.6V.ii. Repeat part i, for T = 100 ◦C, assuming that Is has increased to 5.0 µA.Using constant-voltage diode model, where VDO = 0.5 V, plot vo versus vi. Make sure to show all steps, initial plots with dashed lines, final plot, amplitudes, slopes, intersection with axis, etc.Suppose a drift current density of 5000 A/cm2 exists in the neutral region on the n-type side of a diode that has a resistivity of 0.5 Ω· cm. What is the electric field needed to support this drift current density?
- Suppose a Schottky barrier diode can be modeled by the diode equation in Eq. as shown with IS =10−7 A. (a) What is the diode voltage at a current of 50 A? (b) What would be the voltage of a pn junction diode with IS =10−15 A and n =2?Determine Q-point for the diodes in the circuit given below using the ideal diode model where, R1 = 12.2 kΩ, R2 = 16 kΩ, and R3 = 14 kΩ. (Note: Label the diodes from left to right.)A silicon diode has a reverse saturation current of 1.17 nA and forwards bias voltage of 0.4 V at a temperature of 25°C, find a) The ideality factor; b) The Thermal Voltage; c) The forward bias current
- A silicon diode has a reverse saturation current of 1.17 nA and forward bias voltage of 0.4 mA at a temperature of 25°C, find d. The ideality factor; e. The Thermal Voltage; a. The forward bias currentDetermine the reverse voltage and reverse current for the diode in the Figure below for each of the diode models. Also find the voltage across the limiting resistor in each case. Assume IR = 1-µA. a. The value of reverse current, assuming ideal diode model. b. The value of reverse voltage, assuming ideal diode model. c. The value of voltage across the limiting resistor, assuming ideal diode model. d. The value of reverse current, assuming practical diode model. e. The value of reverse voltage, assuming practical diode model. f. The value of voltage across the limiting resistor, assuming practical diode model. g. The value of reverse current, assuming complete diode model. (in µA) h. The value of reverse voltage, assuming complete diode model. (in mV) i. The value of voltage across the limiting resistor, assuming complete diode model. (in V)The diode current in a p-n junction is modeled exponentially (given below.) When the p-n junction is polarized with 0.7V and 0.75V, the currents flowing through the diode are again measured on the basis of 1.36 mA and 7.20 mA. Accordingly, what is the ideality factor? (Note: Take the thermal voltage as mV)
- Briefly discuss the difference between Diode Piecewise-linear model, Simplified model, and Ideal device/ equivalent circuit. Study the diode specification sheets of a 1N4001 and 1N5401 diodes provided by the manufacturer and compare their difference. Give typical application of each. Discuss briefly how to test junction diode.Suppose a drift current density of 2000 A/cm2 exists in the neutral region on the p-type side of a diode that has a resistivity of 2.5 μ·cm. What is the electric field needed to support this drift current density?1. Briefly discuss the difference between Piecewise-linear model, Simplified model, and Ideal device. 2. Discuss briefly how to test junction diode. 3. Study the diode specification sheets of a 1N4001 and 1N5401 diodes provided by the manufacturer and compare their difference. Give typical application of each.