Consider a p-type silicon sample at 300 K with an acceptor atom concentration of 1019 (assume complete ionization). Assume that the intrinsic carrier concentration is 1.0x1010 cm3. Determine the drift current density when an electric field of 40 V/cm is applied to this extrinsic p-type semiconductor. Assume that the mobility of electrons is 1500 cm2/(V-s) and the mobility of holes is 470 cm²/(V-s). Lütfen birini seçin, a.3080 A/cm b.30080 A/cm C.30080 A d.3080 A

Consider a p-type silicon sample at 300 K with an acceptor atom concentration of 1019 (assume complete ionization). Assume that the intrinsic carrier concentration is 1.0x1010 cm3. Determine the drift current density when an electric field of 40 V/cm is applied to this extrinsic p-type semiconductor. Assume that the mobility of electrons is 1500 cm2/(V-s) and the mobility of holes is 470 cm²/(V-s). Lütfen birini seçin, a.3080 A/cm b.30080 A/cm C.30080 A d.3080 A

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

See similar textbooks

Similar questions

The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
Based on the charge neutrality equations,a) Obtain a mathematical expression for the density of free electrons and free gaps, for a doped n-type semiconductor, where there is still a significant residual (and unintended) concentration of acceptorsb) Obtain a simplified expression, for the case where this concentration of acceptors tends to zero.
Hall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A = 2.5 × 10-3cm2, I = 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample.
The density of free electrons in an arbitrary semiconductor in a given energy band is obtained by considering that there must be an available state in this band and by weighting it with the probability that this state is occupied. a) State the mathematical description of this carrier density, explaining the meaning of each term. b) Considering the conduction band stall, explain why the distribution of carriers as a function of energy is not monotonically increasing (or decreasing) Please explain each step as I'm having trouble in understanding this subject.
Using Schockley’s equation;i. Determine the diode current at 20 ◦C, for a silicon diode with Is = 50 nA and an applied forward bias of 0.6V.ii. Repeat part i, for T = 100 ◦C, assuming that Is has increased to 5.0 µA.
A 100Ω resistor is to be made at room temperature in arectangular silicon bar of 1 cm in length and 1mm 2 in cross sectionalarea by doping it appropriately with phosphorous atoms. If theelectron mobility in silicon at room temperature be 1350 cm 2 /V-second. Calculate the dopant density needed to achieve this. Neglectthe insignificant contribution by the intrinsic carriers.
Based on the charge neutrality equations,a) Obtain a mathematical expression for the density of free electrons and free gaps, for a doped n-type semiconductor, where there is still a significant residual (and unintended) concentration of acceptorsb) Obtain a simplified expression, for the case where this concentration of acceptors tends to zero. Please explain each step as I'm having trouble in understanding this subject.
The applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.
Take a diode formed by the junction of two type n and p semiconductors. In the figure below is the diagram of the energy bands of these semiconductors, (remember the concept of fermi energy, and knowing that for a pure semiconductor it is in the middle). Based on the figures below, answer a) What is the possible current direction in the direction from p to n or from n to p? b) Explain why the current flow occurs only in one direction.
Calculate the intrinsic carrier concentration of a semiconductor in units of (cm-3). Use the room temperature bandgap and effective density of states. Assume the parameters given below: Semiconductor: Germanium Temperature: 206 (K)
Consider the above semiconductor structure, where Al is alloyed into an n-type Si sample with Nd=1016 cm-3 that formed a circular cross-section junction of diameter 0.02 inch. If the acceptor ion concentration in the alloyed regrown region is Na=4x1018 cm-3 then for this junction at thermal equilibrium calculate- (a) V0, xn0, xp0, Q+ and ε0.(b) Draw the charge density and electric field distribution within the region, W.
Draw band diagrams for below contacts. a) metal-n-type semiconductor for Φm< Φs b) metal-n-type semiconductor for Φm> Φs c) metal-p-type semiconductor for Φm< Φs d) metal-p-type semiconductor for Φm> Φs Clearly specify type of contact, Schottky barrier, built-in-potential and the depletion width in the band diagram