| Find the resistivity at 300 K for a Si sample doped with 1.0x10 cm' of phosphorous atoms, 8.5x 102 cm of arsenic atoms and 1.12x10o cm of boron atoms. Assume that the impurities are completely ionized and the mobilities are u = 1500 cm /V.s, u, 500 cm /V.s, independent of impurity concentrations. n 9.65x10° cm in Si at 300 K. %3D

| Find the resistivity at 300 K for a Si sample doped with 1.0x10 cm' of phosphorous atoms, 8.5x 102 cm of arsenic atoms and 1.12x10o cm of boron atoms. Assume that the impurities are completely ionized and the mobilities are u = 1500 cm /V.s, u, 500 cm /V.s, independent of impurity concentrations. n 9.65x10° cm in Si at 300 K. %3D

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 82P: A tightly wound solenoid at 4.0 K is 50 cm long and is constructed from Nb wire of radius 1.5 mm....

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