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|4. A P'N abrupt junction silicon diode has N = 1017 cm³ and Np = 5x1015 cm³. Given t, (in N) = 0.1µs, Tn (in P) = 0.02 µs, and A = 104 cm², determine: a) The reverse saturation current. b) For Va = V bil2, the excess minority carrier concentration at x'= 0 (x= xn) and at x' = 1um into N. c) For Va=0.75 Vbi, the injected minority carrier currents on both sides of the depletion layer. a .

|4. A P'N abrupt junction silicon diode has N = 1017 cm³ and Np = 5x1015 cm³. Given t, (in N) = 0.1µs, Tn (in P) = 0.02 µs, and A = 104 cm², determine: a) The reverse saturation current. b) For Va = V bil2, the excess minority carrier concentration at x'= 0 (x= xn) and at x' = 1um into N. c) For Va=0.75 Vbi, the injected minority carrier currents on both sides of the depletion layer. a .

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|4. A P'N abrupt junction silicon diode has N = 1017 cm³ and Np = 5x1015 cm³. Given t, (in N) = 0.1µs, Tn (in P) = 0.02 µs, and A = 104 cm², determine: a) The reverse saturation current. b) For Va = V bil2, the excess minority carrier concentration at x'= 0 (x= xn) and at x' = 1um into N. c) For Va=0.75 Vbi, the injected minority carrier currents on both sides of the depletion layer. a .
Transcribed Image Text:|4. A P'N abrupt junction silicon diode has N = 1017 cm³ and Np = 5x1015 cm³. Given t, (in N) = 0.1µs, Tn (in P) = 0.02 µs, and A = 104 cm², determine: a) The reverse saturation current. b) For Va = V bil2, the excess minority carrier concentration at x'= 0 (x= xn) and at x' = 1um into N. c) For Va=0.75 Vbi, the injected minority carrier currents on both sides of the depletion layer. a .
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