Phosphorous is predeposited at 4.5 x 10^20 atoms/cm^3 on a silicon wafer with an initial concentration of 3 x 10^15 atoms/cm^3. This process was conducted for one hour at 975 degree C with D = 1.6 x 10^(-3) m^2/hr. Calculate the concentration at the diffusion depth.

Phosphorous is predeposited at 4.5 x 10^20 atoms/cm^3 on a silicon wafer with an initial concentration of 3 x 10^15 atoms/cm^3. This process was conducted for one hour at 975 degree C with D = 1.6 x 10^(-3) m^2/hr. Calculate the concentration at the diffusion depth.

Principles of Instrumental Analysis

7th Edition

ISBN:9781305577213

Author:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Publisher:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Chapter23: Potentiometry

Section: Chapter Questions

Problem 23.12QAP: What arc the advantages of microfabricated ISEs? Describe typical applications of this type of...

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Question

Phosphorous is predeposited at 4.5 x 10^20
atoms/cm^3 on a silicon wafer with an initial concentration of 3 x 10^15 atoms/cm^3.
This process was conducted for one hour at 975 degree C with D = 1.6 x 10^(-3)
m^2/hr. Calculate the concentration at the diffusion depth.

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