Q. 3] A photodiode is made with p-type Si doped with 1023 boron atoms/m and n- type Si phosphorus with 1022 As atoms/m. The width of the p-side is 1 um. For Si, the dielectric constant K = 12. The intrinsic carrier concentration of Si at 300 K is given by nį 1.4 x 1016. The index of refraction of Si is 3.5 and the absorption coefficient is a = 10°m-1. Calculate the quantum efficiency of the photodiode at 300 K.

Q. 3] A photodiode is made with p-type Si doped with 1023 boron atoms/m and n- type Si phosphorus with 1022 As atoms/m. The width of the p-side is 1 um. For Si, the dielectric constant K = 12. The intrinsic carrier concentration of Si at 300 K is given by nį 1.4 x 1016. The index of refraction of Si is 3.5 and the absorption coefficient is a = 10°m-1. Calculate the quantum efficiency of the photodiode at 300 K.

Physics for Scientists and Engineers, Technology Update (No access codes included)

9th Edition

ISBN:9781305116399

Author:Raymond A. Serway, John W. Jewett

Publisher:Raymond A. Serway, John W. Jewett

Chapter38: Diffraction Patterns And Polarization

Section: Chapter Questions

Problem 38.39P: Potassium iodide (Kl) has the same crystalline structure as NaCI, with atomic planes separated by...

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