Q1. Identify True or False: a. Forward resistance r, and diffusion resistance r, are same in the forward biased diode b. Diffusion capacitance C, is a dependent on the forward biased DC potential c. Slope of the load line for diode circuit remains constant if the ratio of V (supply voltage) and R (circuit resistance) remains constant d. Schottky Barrier diode are preferred for fast switching circuits e. Heavily doped pn junction requires more reverse biased to breakdown compared to lightly doped.

Q1. Identify True or False: a. Forward resistance r, and diffusion resistance r, are same in the forward biased diode b. Diffusion capacitance C, is a dependent on the forward biased DC potential c. Slope of the load line for diode circuit remains constant if the ratio of V (supply voltage) and R (circuit resistance) remains constant d. Schottky Barrier diode are preferred for fast switching circuits e. Heavily doped pn junction requires more reverse biased to breakdown compared to lightly doped.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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