Q1. The output characteristic of a typical transistor is shown below, where the quiescent point is selected on it. This transistor is used in the bias circuit presented below. Find the suitable values of RB and Rc to fix the Q-point of the circuit properly. 12 +Vcc = 12 V Is = 70 uA 10- Ig 60 uA 8- Rc Is= 50 uA RB Iy= 40 uA Ia = 30 uA - 20 uA B = 100 2- Is VBE = 0.7 V -2- 2 8 10 12 14 16 VCE (V) 6.

Q1. The output characteristic of a typical transistor is shown below, where the quiescent point is selected on it. This transistor is used in the bias circuit presented below. Find the suitable values of RB and Rc to fix the Q-point of the circuit properly. 12 +Vcc = 12 V Is = 70 uA 10- Ig 60 uA 8- Rc Is= 50 uA RB Iy= 40 uA Ia = 30 uA - 20 uA B = 100 2- Is VBE = 0.7 V -2- 2 8 10 12 14 16 VCE (V) 6.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter5: Transmission Lines: Steady-state Operation

Section: Chapter Questions

Problem 5.11MCQ

See similar textbooks

Similar questions

Element values in the circuit given in the figure are given below. R1=55kΩ,R2=8.4kΩ, Rc=6.8kΩ, RE=2kΩ, Vcc= 22V, β=90, C1=C2= 10μF, CE=20μF a) Calculate the VB, VE,IE,re b) Draw the small sign equivalent circuit of the circuit. c) Using the small signal circuit, write the expression for the input resistance of the circuit and calculate it. d) Write the expression for the output resistance of the circuit using the small sign circuit and assuming the output resistance of the transistor to be infinite; Calculate numerically. e) When the output resistance of the transistor is assumed to be infinite, obtain the output voltage in terms of the input voltage and calculate the gain. *when you solve the first 3 steps, I will send it separately for the other three steps ***this part2 can you also solve d and e, please?
Element values in the circuit given in the figure are given below. R1=55kΩ,R2=8.4kΩ, Rc=6.8kΩ, RE=2kΩ, Vcc= 22V, β=90, C1=C2= 10μF, CE=20μF a) Calculate the VB, VE,IE,re b) Draw the small sign equivalent circuit of the circuit. c) Using the small signal circuit, write the expression for the input resistance of the circuit and calculate it. d) Write the expression for the output resistance of the circuit using the small sign circuit and assuming the output resistance of the transistor to be infinite; Calculate numerically. e) When the output resistance of the transistor is assumed to be infinite, obtain the output voltage in terms of the input voltage and calculate the gain. *when you solve the first 3 steps, I will send it separately for the other three steps
The ac equivalent circuit for an amplifier is shown. Assume the capacitors have infinite value, RI =750Ω, RB =100 kΩ, RC =100 kΩ, and R3 =100 kΩ. Calculate the input resistance and output resistance for the amplifier if the BJT Q-point is (75 μA, 10 V). Assume βo =100 and VA =75 V.
Design For the design of the amplifiers, consider a very large load resistance RL. Use a 15 V DC source and a sinusoidal input signal of 200 mVpp and 1 kHz. Design a voltage amplification stage with a common emitter amplifier thatmeet the following specifications: Voltage gain of 15 (Av2 ≅ 15) Input impedance greater than or equal to 10 times Zo1 (Zi2 ≥ 10 Zo1). Low cut frequency less than or equal to 20 Hz (fcb2 ≤ 20 Hz). Maximum symmetric excursion. Use a 2N2222A (NTE123A) transistor. Also, determine the value of the impedance output (Zo2) of the designed circuit.
Coonsider the common emitter amplifier shown in figure below. Assume a β of 100, VBE = 0.7V, VT = 25mA and VA = 100V. Draw an equivalent DC model and determine the rπ, transconductance (gm) and ro. Draw an equaivalent AC model using the small-signal model Find an expression for vbe and vo in terms of the input voltage
a. In AC, how are the capacitors treated? b. In AC, how are DC sources treated? c. What is the amplifier configuration of Figure 4? d. What is the expected phase shift of the sinusoidal input at the output side? e. What is Zi across RG, the gate resistor? f. It is the IC in its smallest form. g. The most commonly used metal as interconnect of the chip to external peipheral. h. How is pin 1 of the chip determined? i. An IC package similar to a DIP but with the pins bent outward. j. Which sensors are packed as IC?
Compare hybrid model circuit and re model circuits. Which circuit are you going to recommend in solving AC signal amplifier stage. Defend your answer
COMMON EMITTER AMPLIFIER CIRCUIT Choose appropriate parameters for the CE amplifier circuit (shown in figure) with a sinusoidal input of amplitude equal to 6mV and a gain of 1.9. Find Vout Choose appropriate parameters and solve the above question.
Design a Single-Stage Common Emitter Class A Amplifier Specifications:Voltage Divider Bias Circuit Supply: Any value from 10Vdc to 24VdcLoad: 1kΩVoltage Gain: Any value from 80 to 400Lower Cutoff Frequency: 100 HzSinusoidal source (zero internal resistance): 50mVp-pTransistor: Si, β = 75 • Base-Collector capacitance = 8pF • Base-Emitter Capacitance = 25pF a) compute for the biasing resistances.b) determine the dc transistor terminal voltages and transistor currents.
Choose the correct answer to the two points 2-The ac emitter resistance of an emitter followera-Equal the dc emitter resistance .b-Is larger than the load resistance .c-Is β times smaller than the load resistance. d-Is usually less than the load resistance.3-A common-base amplifier can be used when a-Matching low to high impedance.b-A voltage gain without a current gain is required. c-A high- frequency amplifier is needed.d-All of the above.
a. IcQ. b. VCEQ. c. Locate the Q-point on the output characteristics. d. Draw the AC equivalent circuit of the above bias network. R1=100kOhms R2=17kOhms
In the circuit in the figure IDSS = 12 mA, VP = -8 V, VGSQ = -2.4 V, IDQ = 4.12 mA, Rsig = 10 kΩ, RG = 100 kΩ, RD = 2 kΩ, RS = 470 Ω, RL = 23.7 kΩ and it is known that rd = 20 kΩ. What will be the voltage gain of the circuit? NOTE: The FET output impedance is rd = 20 kΩ and must be taken into account in the calculations.