Q3 Consider a silicon pn junction at T 300 K with acceptor doping concentrations of 1016 cm-3 and donor doping concentrations of 1015 cm-3. Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/ n = 1.5 x 1010 cm %3D Es = 1.035 x 10-12F/cm

Q3 Consider a silicon pn junction at T 300 K with acceptor doping concentrations of 1016 cm-3 and donor doping concentrations of 1015 cm-3. Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/ n = 1.5 x 1010 cm %3D Es = 1.035 x 10-12F/cm

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 15P

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