Question 4 A silicon p-n junction diode has the following parameters at 300 K, Na = 5 × 1017 cm-³ and Na = 1 x 1015 cm-³, Dn = 8 cm²/s, D, = 10 cm²/s, T =1 x 10-® s, t, = 1 × 10-7 s, %3D E, = 11.7, n = 1 × 1010 cm-3. When a forward bias of 0.6 V is applied, (a) Determine the minority carrier density at the edge of depletion in the n- and p-side. (b) Determine the diode current. (c) Determine the value of the distance of the plane from the depletion edge where the current due to the hole transport is equal to the electron transport.

Question 4 A silicon p-n junction diode has the following parameters at 300 K, Na = 5 × 1017 cm-³ and Na = 1 x 1015 cm-³, Dn = 8 cm²/s, D, = 10 cm²/s, T =1 x 10-® s, t, = 1 × 10-7 s, %3D E, = 11.7, n = 1 × 1010 cm-3. When a forward bias of 0.6 V is applied, (a) Determine the minority carrier density at the edge of depletion in the n- and p-side. (b) Determine the diode current. (c) Determine the value of the distance of the plane from the depletion edge where the current due to the hole transport is equal to the electron transport.

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter12: Batteries And Other Sources Of Electricity

Section: Chapter Questions

Problem 3PA: An office building uses a bank of 63 lead-acid cells connected in series with a capacity of 80...

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