Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample atone point. An electric field of 50 V/cm is applied across the sample, and the field movesthese minority carriers a distance of 1.2 cm in 100 µs. The diffusivity of the minoritycarriers [ cm²/s ] at 350 K is. .5.1812.3 O5.817.24 O

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Answered: Minority carriers (holes) are injected…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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A silicon sample is supporting an electric ﬁeld of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1. What is the probability to find holes fh(Ec) at the conduction band edge?2. What is the Fermi-Dirac probability for electrons at the valence band edge, fe(Ev)?3. What is the Fermi-Dirac probability for holes at the valence band edge, fh(Ev)?
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1.What is the Fermi-Dirac probability for electrons at the intrinsic Fermi level, fe(Ei)?
The ability to move holes in a semiconductor at T = 300 K is 500 cm? / V is the voltage given as 26mV. what is the diffusion constant of the holes accordingly
Hall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A = 2.5 × 10-3cm2, I = 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample.
A semiconductor has a bandgap of 2 eV and effective densities of states of Nc = 1019/cm3 and Nv = 5x1018/cm3. If this semiconductor is doped with 1017donors/cm3 (fully ionized), calculate the hole, electron, and intrinsic carrier concentrations at 600C. Sketch the band diagram and indicate the position of EF.
The output of a diode used as a solar cell is given by IC =1−10−15[exp(40VC)−1] amperes What operating point corresponds to Pmax? What is Pmax? What are the values of ISC and VOC?
In the given circuit, since C= 47 μF, RL= 1 kW and Vs=90 cos200t V; What is the diode current during the one-time charging time of the capacitance?
-5 Q6 Given that the Boltzmann's constant is 8.617343 x 10 eV/K, with the thermal voltage at room temperature is 0.0259V determine the thermal voltage if a diode is at temperature: a. 200 K b. 40°C c. 400 K Hint: K: Boltzmann's constant, T: Temperature in Kelvin, q: charge of an electron VT at room temperature (300K) = 0.0259V 4
Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1×1016electron/m³) with the doping concentration of (2×1016atoms/m³) of the phosphorus and (1×1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s), the mobility for the holes (0.05m2/V.s), the electric field (100V/m), and the cross section area is 1mm?.
(a) Calculate the indium content of an InGaAs ternary compound semiconductor using a linear approximation, which would have a bandgap of 1.155 eV knowing that a bandgap (EG InAs) of InAs is 0.354 eV and a bandgap (EG GaAs) of GaAs is 1.424 eV. (b) Calculate the effective electron mass of the InGaAs ternary compound semiconductor using a linear approximation with an indium content from question (a). Use a relative electron effective mass of InAs of 0.031 and of GaAs of 0.0665.

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