The circuit in Figure 1 shows an example of a D-MOSFET device in a voltage-divider bias circuit configuration. Let Ipss = 8 mA and Vp = - 4V. (i) Identify whether the FET is a n-channel or p-channel D-MOSFET. State your reason. (ii) Design a voltage divider bias network to have a Q-point at Ipo = 5mA, Vps = 8V, R1=1MQ and R1=10R2. Use standard values (refer to APPENDIX I). 20 V RD 10ΜΩ Vo IDss = 8 mA Vp=- 4 V 1 ΜΩ Rs

The circuit in Figure 1 shows an example of a D-MOSFET device in a voltage-divider bias circuit configuration. Let Ipss = 8 mA and Vp = - 4V. (i) Identify whether the FET is a n-channel or p-channel D-MOSFET. State your reason. (ii) Design a voltage divider bias network to have a Q-point at Ipo = 5mA, Vps = 8V, R1=1MQ and R1=10R2. Use standard values (refer to APPENDIX I). 20 V RD 10ΜΩ Vo IDss = 8 mA Vp=- 4 V 1 ΜΩ Rs

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Draw, Illustrate and label your schematic diagram before solving the problem. 1) Given a Fixed-Biased transistor circuit with Beta DC is 200 , voltage at common collector is +22v ,base supply voltage is +11V, Base resistor is 47kOhms , collector resistor is 390 ohms ,Voltage at Base-emitter junction is 0.7v. Determine the Q-point of collector current and Voltage at collector-emitter junction. These might be help as a guide to solve the problem.
For the transistor , IS = 4 × 10−16 μA,βF = 75, and βR = 4. (a) Label the collector, base,and emitter terminals of the transistor. (b) What isthe transistor type? (c) Label the emitter-base andcollector-base voltages, and label the normal direction for IE , IC, and IB. (d) Write the simplified formof the transport model equations that apply to thisparticular circuit configuration. Write an expressionfor IE /IB. Write an expression for IE /IC. (e) Findthe values of IE , IC, IB, VC B, and VE B.
Discuss the main features of the two basic types of MOSFETs. If the gate-to-source voltage in an n-channel E-MOSFET is made more positive, does the drain current increase or decrease? If the gate-to-source voltage in an n-channel depletion MOSFET is made more negative, does the drain current increase or decrease?
Fixed-bias configuration, Emitter-bias configuration, and Voltage-divider configuration- rank these three configurations based on their provided stability (i.e. ? independency)to the operating point. Use mathematical terms/equations to explain and justify your
What is the voltage value Vgs for the n-channel MOSFET given in the figure? (VT=2V, K=0.4mA/V^2, VDD=5V, RD=RS=1K)
Consider the voltage divider circuit for biasing an n-channel E-MOSFET.Given the following quantities: IDON = 3 ma at 10 V; VTH = 5 V; Supply VDD = 40 V;R1 = 22 MΩ, R2 = 18 MΩ, RD = 3 kΩ, Rs = 820 Ω . Determine ID and VDS
Subject: Basic Electronics Can you please describe the following: 1.) n-Channel JFET 2.) p-Channel JFET 3.) n-Channel Depletion-type MOSFET 4.) p-Channel Depletion-type MOSFET 5.) n-Channel Enhancement-type MOSFET 6.) p-Channel Enhancement-type MOSFET 7.) CMOS 8.) n-Channel Depletion-type MESFET 9.) n-Channel Depletion-type MESFET 10.) Transfer Curve of n-Channel JFET
Sketch the physical structure of an n-channel enhancement MOSFET. Label the channel length L, the width W, the terminals, and the channel region. Draw the corresponding circuit symbol.
Draw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and Voltage at common collector is +28V,Voltage at Base-emitter junction is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.
In your own understanding and words analyse why currently VLSI circuits use MOSFETs instead of BJTs
Sketch the transfer and drain characteristics of an n - channel depletion type MOSFET with IDSS = 12 mA and VP = –8 V for a range of VGS = –VP to VGS = 1V. Show the details of your work.
(a)(i) State three differences between the Field Effect Transistor (FET) and the Bipolar JunctionTransistor (BJT). (ii) Draw the physical structure and device symbol for an n-channel JFET. (iii) What is meant by drain characteristics (b) Determine the drain current of an n-channel JFET having pinch-off voltage VP = - 4 and drain-source saturation current IDSS=12mA at the following gate-source voltages(i) VGS= 0V(ii) VGS= -2V (c) Calculate the transconductance, gm of a JFET having specified values of IDSS=12mA and VP= - 4V at bias points(i) VGS= 0V and(ii) VGS= -1.5V.