I need the answer as soon as possible SiliconatomswithConcentration o.*10 cmaddedtogalliumarearsenide GaAsat ToyookA ss umethatsilicon atomsactasFully ionizedthedopant atom s andto createaresnicthe Following Pparame ters Foratholes - UseTz 300k, Ne z4.7*10 cm andthe bendgap is Eg:l.42evthe temperature range.andis ConstantoverthedonorConcentrationisCencentration isthe acceptorO the resulting Semiconductor would beConcen trationi'stheintrinsic歩 holeCon Centration isthe elechronConcentra tionA ssume the ionization enerqy RorVidonors is 0.00 58 evthe fraction ofelectran thutane Stilin the donorStates is

Calculate the donor and acceptor concentrations in the semiconductor. The concentration of the…

Answered: the donor ConCentration Concentration…

the donor ConCentration Concentration is the acceptor the resulting Semiconductor would be the intrinsic Concen tration is the hole Con Centration is

Chemistry: The Molecular Science

5th Edition

ISBN:9781285199047

Author:John W. Moore, Conrad L. Stanitski

Publisher:John W. Moore, Conrad L. Stanitski

Chapter19: The Chemistry Of The Main-group Elements

Section: Chapter Questions

Problem 74QRT

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Question

I need the answer as soon as possible

Silicon
atoms
with
Concentration o.
*10 cm
added
to
gallium
are
arsenide GaAs
at Toyook
A ss ume
that
silicon atoms
act
as
Fully ionized
the
dopant atom s and
to create
aresnic
the Following Pparame ters For
at
holes - Use
Tz 300k
, Ne z4.7*10 cm and
the bendgap is Eg:l.42ev
the temperature range.
and
is Constant
over
the
donor
Concentration
is
Cencentration is
the acceptor
O the resulting Semiconductor would be
Concen trationi's
the
intrinsic
歩 hole
Con Centration is
the elechron
Concentra tion
A ssume the ionization enerqy Ror
Vi
donors is 0.00 58 ev
the fraction of
electran thut
ane Stil
in the donor
States is

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