The doping concentration used in the collector region of silicon BJT is Nc = 5x 1015 cm3 and the punch through breakdown voltage is to be 60V. Find the doping concentration used in the base region (NB) if the metallurgical base width is 0.75 um. Find the changed punch through breakdown voltage if Nc is increased to 5 x 1016 cm-3.

The doping concentration used in the collector region of silicon BJT is Nc = 5x 1015 cm3 and the punch through breakdown voltage is to be 60V. Find the doping concentration used in the base region (NB) if the metallurgical base width is 0.75 um. Find the changed punch through breakdown voltage if Nc is increased to 5 x 1016 cm-3.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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