Can you explain every step les?Set as defaultThe electron density in a silicon sample decreases linearly from 1016 cm-³ to 1015 cm-3over a distance of 10 cm. The area of the sample is 6 cm² and the mobility of electronis 580 Vs/cm². Determine the diffusion current of electrons.

Current density is J = I/A Here I is current A is Area

The electron density in a silicon sample decreases linearly from 1016 cm-3 to 1015 cm-³ over a distance of 10 cm. The area of the sample is 6 cm² and the mobility of electron is 580 Vs/cm². Determine the diffusion current of electrons.

The electron density in a silicon sample decreases linearly from 1016 cm-3 to 1015 cm-³ over a distance of 10 cm. The area of the sample is 6 cm² and the mobility of electron is 580 Vs/cm². Determine the diffusion current of electrons.

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter30: Dc Motors

Section: Chapter Questions

Problem 6RQ: What is CEMF?

See similar textbooks

Related questions

Q: What is the lighting and receptacle demand load for an 1000 sq. m office space with one hundred ten,…

Q: Given the truth table in Table 1, answer the following questions: a. Find the minimum SOP…

Q: Suppose a discrete-time LTI system has the impulse response h[n] [u]u 3 2 [u]x 1 0 -1 and that the…

Q: Suppose we know the system function H(z) of a discrete-time LTI system has a pair of…

Q: (MCQ): A 2-input Dynamic CMOS gate needs how many Transistors: a. 4 b. 3 c.…

A: We need to select correct option for dynamic CMOS logic .

Q: Q4. The probability density function of a signal x(t) is shown below: -2 1/2 fx (x) 2 X The signal's…

A: Given, The probability density function of a signal x(t) is shown below,

Q: Consider the causal discrete-time LTI system described by the following constant coefficient…

Q: An AC source operating at 60 Hz with a maximum voltage of 172 V is connected in series with a…

A: Given, Frequency of AC source, f = 60Hz Maximum Voltage of AC source, ∆Vsource(max) = 172v A series…

Q: 7. Draw the D Flip Flop circuit 8. Produce a truth table for the D Flip Flop circuit

A: D Flip-Flop:- The D flip-flop has a single digital input labeled "D" and is a timed flip-flop. The…

Q: 5) Consider the bridge circuit described by the diagram below. a. Use mesh analysis to find Ix. b.…

Q: Apply voltage divider rule:VL=RLRS+RLViminso,Vimin=RS+RLRLVLVimin=91Ω+220Ω220Ω×8 voltVimin=311220×8…

Q: tion: Suppose a discrete-time LTI system is characterized by the following system func- 2-212-1 ibl.…

Q: The figure is shows the first stage of a superheterodyne receiver. The desired input signal is at a…

A: Given: Input signal frequency, fc=700 MHz, Local oscillator frequency, fLO=1 GHz, Intermediate…

Q: Determine the current lett for ty 22 جدعانا 6 ↑ 4.5 22 2 F + ✓ LEE) tiss 22

Q: Explain what this matching box is. Describe the parts

A: The given diagrams are shown below. It is asked what is this matching box and also it asked to…

Q: Exercise 5: Unit step function (for command) (a) Plot the following unit step function between -20…

A: Given: u(t)=1 ;t<00 ;t≥0 t=-20 to +20 with step size of 0.01. To do: a) Plot u(t) between -20 to…

Q: need number 11

A: Given: Cross sectional area=2000×10-6 m2A=104×10-6 m2Mean circumference=1000 mm10 mm=0.1 T10 mm=400…

Q: For the circuit below, what is the Thevenin's resistance (in 2) at terminal a and b? 50 V 5Ω www ww…

A: In the case of an RLC type of circuit, a circuit can be represented by a single phase and resistor…

Q: For each time domain signal x(t) below, find its Fourier transform X(ƒ) X(j2f) and sketch the…

A: As per Bartleby guideline we need to answer the first question only. Kindly repost the rest…

Q: Problem Solving: Simplify and determine the equivalent circuit resistance below: R₁=20 E= 460 V R5=…

Q: Does Ohm's Law apply to an AC circuit containing an inductor?

A: According to ohm's law, current pass through any linear and passive element is directly proportional…

Q: A 4-input pseudo-NMOS gate needs how many Transistors: a. 6 b. 5 c. 4 d. 3

A: Pseudo NMOS circuit:- The inverter that employs a load or p-device pull-up with a permanently…

Q: number of NMOS transistors required to implement a single pass transistor is. a. 4…

A: We need to select correct option for pass transistor .

Q: Can Ohm's Law be applied to an AC circuit containing an capacitor?

A: Ohm's law states that the current flowing through a circuit is proposnal tothe voltage applied…

Q: hat the below reduced transfer function (Figure 1) can be written as 3 s³ +1 s) (s) 2 4 s² +25² +2s…

Q: 1. Solve the total or equivalent resistance: 2. Rea 492 ww 892 oww 692 192 292 392 592 A 20-kW,…

Q: Obtain the inductor current for both t= 0 and t> 0 in the given circuit. Assume L = 5 H. 10 V (+ 292…

A: Given data: L=5 H The question is to find: (a) Inductor current for t=0- (b) Inductor current for…

Q: A magnetic ring has a mean circumference of 20 cm and a cross-section of 20 cm² and has 800 numbers…

A: Given- A magnetic ring- Mean circumference l=20 cm, Cross-section area A=20 cm2, Number of turns of…

Q: Suppose NASA wants to move a malfunctioning spacecraft from a circular orbit at 450 km altitude to…

Q: 1. . Given the Boolean function F = xyz + xyz + xyz a. List the truth table of the function. b. Draw…

Q: compare dielectric strength of transformer oil , and solid dielectrics , gas dielectrics.

A: Dielectric strength:- The electrical power of a material is referred to as its dielectric strength.…

Q: 2.) By applying Kirchoff's current law, obtain the values of V, U₁, iz in the circuit shown

A: The required parameters can be calculated by applying kirchhoff's current law to the nodes and we…

Q: What is equivalent of a shorted line less than quarter wavelength long

Q: = A sample of semiconductor is doped with ND 1013 cm³. The intrinsic carrier density is 1013 cm-³.…

Q: Exercise 3: Plotting two signals together (Matlab function: hold) Plot the following sinusoidal and…

A: Given, x(t) = e-at Where a= (S1+S2)/1e4 K2= (S1+S2)/1e6 f02=(270+K2)Hz y(t) = cos (2π.f02.t) i e…

Q: the cct shown below. Find Vo? R+ R₁ ани R₂ R3 me -т _Vo = kst, 1ks, R₂ =2 k-2, R³=3Kv f=9k₁

Q: Consider the circuit shown below. The SCS has a triggering voltage of 1 V and holding current of 4…

A: Given SCS trigger voltage, VT =1 V holding current , IH =4 mA R1 =500 Ω R2 =1kΩ Note: Gate input…

Q: Problem 1: The switch in Fig.1 has been closed for a very long time. What is the charge on the…

A: In the given circuit we have to calculate part a) Current through resistors when switch is closed…

Q: 24V 2 b 19 2452 d हुउर th 382 J10-32 e T- f 8V

A: This is a problem of circuits. The solution can be obtained by using mesh analysis. The detailed…

Q: 1. Determine the resistance between points a and b. a b 1202 1252 652 www 18.52 312 www 652

A: We need to find out the total equivalent resistance for given circuit , we will find it by using of…

Q: Calculate the out Put y(t) of the (LPF) show belwo if X+) = te Ắc Xit) R www 4(E)

Q: www ww R₂ C₁ R₁ C₂ 2₁ Rf R3 + R₁ D₁ C3 Vout

A: The above circuit is the circuit of the Wein bridge for the automatic gain control. The Zener diode…

Q: 1 Consider the circuit in the figure. Suppose that the battery is actually a bank of 20 12 V…

Q: Q1: The total harmonic distortion of a closed loop system is 5%. Distortion without feedback is 10%.…

Q: Simplified the following equations using K-map, show your Truth Table and Logical Diagram.

A: Simplify the following equations using K-map, show your Truth Table and Logical Diagram.…

Q: A3) Simulate the circuit with the above values and obtain the plots for VF, VC, VR and I of the…

A: The capacitor is an important passive component of electrical energy which is used in electrical…

Q: Given the circuit below with the switch closed for a long time, then opening at t=0, and with the…

A: The question is based on transient analysis of an RC circuit. The concept used is that under steady…

Q: 20v- -Jov t Sketch A IDEAL R Vo

Q: Problem 12 The output of a causal LTI system is related to the input x(t) by the differential…

Q: If the maximum energy stored in the coil is 3mJ, what is the value of the resitance in the figure?…

Concept explainers

Types of Charge Carriers

A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.

Question

Can you explain every step

les?
Set as default
The electron density in a silicon sample decreases linearly from 1016 cm-³ to 1015 cm-3
over a distance of 10 cm. The area of the sample is 6 cm² and the mobility of electron
is 580 Vs/cm². Determine the diffusion current of electrons.

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step by step

Solved in 2 steps with 1 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Types of Semiconductor Material and Its Energy Band Analysis

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

At 1018cm3 the silicon material is n-type doped and has ae resistanceof 10 ohms. The sample has an area of 10-6cm2and a length of 10cm. What is the doping efficiency (mn = 800cm2 / V-s) of the sample?
Boron gas is used to dope the silicon wafer to a dopant concentration of 10¹6 / cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and holes in equilibrium? (b) What type of semiconductor do we have after the process?
(a) At what temperature will ni =1015/cm3 in silicon? (b) If the donor doping is 1015/cm3, what are the electron and hole populations at the temperature inpart (a)? (c)What would be the electron and hole populations at room temperature?
Since , C= 47 micro farad, RL= 1Kohm, Vs= 90cos2000t V What is the diode current in the one-time fill time range of the capacity?
Estimate the amount of free electrons and holes in a N-doped Silicon wafer a) at room temperature with 1014 cm-3 doping level, and b) at 650K with 1015 cm-3 doping level
A silicon sample is supporting an electric ﬁeld of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
Calculate the drift current density in a semiconductor for a given electric field.Consider a germanium sample at T = 300°K with doping concentration of Nd = 0 and Na= 1016 cm-3. Assume complete ionization and electron and hole mobilities are 3900 cm2/V⋅sec and 1900 cm2/V⋅sec. The applied electric field is E = 50 V/cm
Calculate the intrinsic carrier densities in silicon and germanium at (a) 77K, (b) 300K, and (c) 450K. Use the information from the table shown.
Assume D = D0e^–Ea/kT is the diffusion coefficient of boron in silicon surface, whereD0 = 10.5 cm^2/s and Ea = 3.7 eV. The substrate is N-type silicon doped to 10^15 cm^3.N0 = 10^15 cm^2 of boron is introduced just below the silicon surface.(a) What is the junction depth after a 1-h drive-in at 1,100°C?(b) By how much will the junction depth change after 10^6 h (~100 years) of operation at100°C
In the circuit given below, draw the collector current of BJT 2 to scale for 1T (1 period). Note: For 1 Diode approaches, take Vd=1V. 2 BJT1 hfe=100; BJ2 hfe = 10.
Consider an n-type Silicon substrate at 300 K temperature. If the doping of the donor impurity is given as Nd=1016/cm3, then what will be the thermal equilibrium electron and hole concentration? Assume that doping concentration of the acceptor impurity Na=0.
Hall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A = 2.5 × 10-3cm2, I = 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample.