Calculate the drift current density in a semiconductor for a given electric field. Consider a germanium sample at T = 300°K with doping concentration of Nd = 0 and Na = 1016 cm-3 . Assume complete ionization and electron and hole mobilities are 3900 cm 2 /V⋅sec and 1900 cm 2 /V⋅sec. The applied electric field is E = 50 V/cm
Calculate the drift current density in a semiconductor for a given electric field. Consider a germanium sample at T = 300°K with doping concentration of Nd = 0 and Na = 1016 cm-3 . Assume complete ionization and electron and hole mobilities are 3900 cm 2 /V⋅sec and 1900 cm 2 /V⋅sec. The applied electric field is E = 50 V/cm
Delmar's Standard Textbook Of Electricity
7th Edition
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter1: Atomic Structure
Section: Chapter Questions
Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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Question
Calculate the drift current density in a semiconductor for a given electric field.
Consider a germanium sample at T = 300°K with doping concentration of Nd = 0 and Na
= 1016 cm-3
. Assume complete ionization and electron and hole mobilities are 3900
cm
2
/V⋅sec and 1900 cm
2
/V⋅sec. The applied electric field is E = 50 V/cm
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