The main feature of photo-detectors made of high energy gap semiconductors is that: O a. They have very small dark current. O b. Their absorption coefficients are quite large. O C. A large number of photons is needed to boost their resulting current. O d. Thin samples are needed for such detectors O e. NON of the given choices is correct.

The main feature of photo-detectors made of high energy gap semiconductors is that: O a. They have very small dark current. O b. Their absorption coefficients are quite large. O C. A large number of photons is needed to boost their resulting current. O d. Thin samples are needed for such detectors O e. NON of the given choices is correct.

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 94AP: Measurements of a superconductor's critical magnetic field (in T) at various temperatures (in K) are...

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