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The problem of re-absorption in homo-junction LEDS can be overcome to some extent by making the top layer p-type and be created very close to the surface. Select one: O True O False

The problem of re-absorption in homo-junction LEDS can be overcome to some extent by making the top layer p-type and be created very close to the surface. Select one: O True O False

Modern Physics
Modern Physics
3rd Edition
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Chapter12: The Solid State
Section: Chapter Questions
Problem 9Q
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The problem of re-absorption in homo-junction LEDS can be overcome to some extent by making the top layer p-type and be created very close to the surface. Select one: O True O False
Transcribed Image Text:The problem of re-absorption in homo-junction LEDS can be overcome to some extent by making the top layer p-type and be created very close to the surface. Select one: O True O False
: Properties of Si, Ge, and GaAs at 300 K , and Some Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 J.s Si Ge Ga As -31 9.11 x 10 Kg Eg (eV) n; (cm Hn (cm²/V – s) Hp (cm²/V – s) Ne (cm-3) Ny (cm-3) m/m. m;/m. Er (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 19 1.602 x 10 8.85 x 10 1.05 x 10-34 J – s C 1500 3900 8500 12 €o F/m 450 1900 400 1.04 x 1019 6 x 1018 4.45 x 1017 7.72 x 1018 2.78 x 1019 8.6 x 10-5 eV/K 26 mV (T K 9.84 x 1018 KT/q = 300 K) 0.082 0.98 0.067 26 meV (T 3 x 10 m/s KT 300 K) 0.28 0.49 0.45 C 11.7 16 13.1 Nair = 1 NGaAs = 3.66 Some useful relations EgAlGa1- As (r) = 1.424 + 1.247x (eV) Egin. Ga1-As (x) = 1.425 – 1.501r + 0.436x2 (eV) 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2
Transcribed Image Text:: Properties of Si, Ge, and GaAs at 300 K , and Some Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 J.s Si Ge Ga As -31 9.11 x 10 Kg Eg (eV) n; (cm Hn (cm²/V – s) Hp (cm²/V – s) Ne (cm-3) Ny (cm-3) m/m. m;/m. Er (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 19 1.602 x 10 8.85 x 10 1.05 x 10-34 J – s C 1500 3900 8500 12 €o F/m 450 1900 400 1.04 x 1019 6 x 1018 4.45 x 1017 7.72 x 1018 2.78 x 1019 8.6 x 10-5 eV/K 26 mV (T K 9.84 x 1018 KT/q = 300 K) 0.082 0.98 0.067 26 meV (T 3 x 10 m/s KT 300 K) 0.28 0.49 0.45 C 11.7 16 13.1 Nair = 1 NGaAs = 3.66 Some useful relations EgAlGa1- As (r) = 1.424 + 1.247x (eV) Egin. Ga1-As (x) = 1.425 – 1.501r + 0.436x2 (eV) 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2
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