Consider an extrinsic semiconductor with a donor density of N, = 7.9E13 cm and an intrinsic carrier density of n, =1.7E10 cm3, Determine the energy difference between intrinsic and extrinsic Fermi energies at temperature T=300K. Enter the solution in eV units. Type your answer. Previous Next

Consider an extrinsic semiconductor with a donor density of N, = 7.9E13 cm and an intrinsic carrier density of n, =1.7E10 cm3, Determine the energy difference between intrinsic and extrinsic Fermi energies at temperature T=300K. Enter the solution in eV units. Type your answer. Previous Next

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter10: Statistical Physics

Section: Chapter Questions

Problem 22P

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Consider an extrinsic semiconductor with a donor density of N, = 7.9E13 cm and an
intrinsic carrier density of n =1.7E10 cm.
Determine the energy difference between intrinsic and extrinsic Fermi energies at
temperature T=300K.
Enter the solution in eV units.
Type your answer.
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