The properties of Si are given below.AW = 28.08 g/mol density = 2.33 g/cm3 e-mobility =0.14 m2/Vsec hole mobility= 0.05m2/Vsec%3D20 ppm antimony (group V) is added to a batch ofsilicon during the crystal growth process. Answerthefollowing.(a) What is the resulting concentration (# per cm3)of Sb atoms in the silicon wafer?(b) What is the free electron concentration at roomtemperature? What assumption did you make?(c) What is the majority carrier?(d) What is the electrical conductivity of the dopedSi?

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The properties of Si are given below. AW = 28.08 g/mol density = 2.33 g/cm3 e- mobility =0.14 m2/Vsec hole mobility= 0.05 m2/Vsec 20 ppm antimony (group V) is added to a batch of silicon during the crystal growth process. Answer the following.

The properties of Si are given below. AW = 28.08 g/mol density = 2.33 g/cm3 e- mobility =0.14 m2/Vsec hole mobility= 0.05 m2/Vsec 20 ppm antimony (group V) is added to a batch of silicon during the crystal growth process. Answer the following.

Chemistry: The Molecular Science

5th Edition

ISBN:9781285199047

Author:John W. Moore, Conrad L. Stanitski

Publisher:John W. Moore, Conrad L. Stanitski

Chapter20: Chemistry Of Selected Transition Elements And Coordination Compounds

Section: Chapter Questions

Problem 90QRT

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Question

The properties of Si are given below.
AW = 28.08 g/mol density = 2.33 g/cm3 e-
mobility =0.14 m2/Vsec hole mobility= 0.05
m2/Vsec
%3D
20 ppm antimony (group V) is added to a batch of
silicon during the crystal growth process. Answer
the
following.
(a) What is the resulting concentration (# per cm3)
of Sb atoms in the silicon wafer?
(b) What is the free electron concentration at room
temperature? What assumption did you make?
(c) What is the majority carrier?
(d) What is the electrical conductivity of the doped
Si?

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