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This problem is AC analysis problem. DC analysis is not needed to answer the question. 9) A. If lp = 1.1 mA, VG = 3.43V, Vs = 1.1V, and Vp = 8.71 V in the Common Source Amplifier below calculate the gain (Vo/Vi) of the circuit. Vo is taken across the Load resistor. Answer: Vo/Vi =. B. For the circuit in problem 9 what would be the ideal DC voltage of the drain so you could achieve Maximum Signal Swing. Given: Va = 3.43 V. Answer: Vo =- When you "verify" a mode of operation you will need to calculate all three voltages (Vc, VB, Ve for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. Assume Capacitors acts like open circuits at DC and short circuits for AC. Assume the following: o Beta = 100 O VBE = 0.7 o V (Thermal) = 26 mV o V (Threshold) = 2V O VA = - 12V = ee R2 For MOSFET saturation mode: assume: 3kn Io = K(Vs-Vr)? (Assume K = 10 mA/V?). R1 C2 10kn R_Load 10kn 1pF C1 R_sig

This problem is AC analysis problem. DC analysis is not needed to answer the question. 9) A. If lp = 1.1 mA, VG = 3.43V, Vs = 1.1V, and Vp = 8.71 V in the Common Source Amplifier below calculate the gain (Vo/Vi) of the circuit. Vo is taken across the Load resistor. Answer: Vo/Vi =. B. For the circuit in problem 9 what would be the ideal DC voltage of the drain so you could achieve Maximum Signal Swing. Given: Va = 3.43 V. Answer: Vo =- When you "verify" a mode of operation you will need to calculate all three voltages (Vc, VB, Ve for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. Assume Capacitors acts like open circuits at DC and short circuits for AC. Assume the following: o Beta = 100 O VBE = 0.7 o V (Thermal) = 26 mV o V (Threshold) = 2V O VA = - 12V = ee R2 For MOSFET saturation mode: assume: 3kn Io = K(Vs-Vr)? (Assume K = 10 mA/V?). R1 C2 10kn R_Load 10kn 1pF C1 R_sig

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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This problem is AC analysis problem. DC analysis is not needed to answer the question. 9) A. If lp = 1.1 mA, VG = 3.43V, Vs = 1.1V, and Vp = 8.71 V in the Common Source Amplifier below calculate the gain (Vo/Vi) of the circuit. Vo is taken across the Load resistor. Answer: Vo/Vi =. B. For the circuit in problem 9 what would be the ideal DC voltage of the drain so you could achieve Maximum Signal Swing. Given: Vg = 3.43 V. Answer: Vo =. When you "verify" a mode of operation you will need to calculate all three voltages (Vc, VB, VE for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. Assume Capacitors acts like open circuits at DC and short circuits for AC. Assume the following: o Beta = 100 O VBE = 0.7 o V (Thermal) = 26 mV o V (Threshold) = 2V O VA = - 12V = ee R2 For MOSFET saturation mode: assume: 3kn lo = K(Vas-V-)? • (Assume K = 10 mA/V²). R1 10kn C2 R_Load >10k 1pF C1 R_sig 1kn 1µF ĮR4 >4kn R3 C3 Vi :1pF
Transcribed Image Text:This problem is AC analysis problem. DC analysis is not needed to answer the question. 9) A. If lp = 1.1 mA, VG = 3.43V, Vs = 1.1V, and Vp = 8.71 V in the Common Source Amplifier below calculate the gain (Vo/Vi) of the circuit. Vo is taken across the Load resistor. Answer: Vo/Vi =. B. For the circuit in problem 9 what would be the ideal DC voltage of the drain so you could achieve Maximum Signal Swing. Given: Vg = 3.43 V. Answer: Vo =. When you "verify" a mode of operation you will need to calculate all three voltages (Vc, VB, VE for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. Assume Capacitors acts like open circuits at DC and short circuits for AC. Assume the following: o Beta = 100 O VBE = 0.7 o V (Thermal) = 26 mV o V (Threshold) = 2V O VA = - 12V = ee R2 For MOSFET saturation mode: assume: 3kn lo = K(Vas-V-)? • (Assume K = 10 mA/V²). R1 10kn C2 R_Load >10k 1pF C1 R_sig 1kn 1µF ĮR4 >4kn R3 C3 Vi :1pF
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