Voltage barrier is present on: O intrinsic semiconductor O doped semiconductor O both

Glencoe Physics: Principles and Problems, Student Edition
1st Edition
ISBN:9780078807213
Author:Paul W. Zitzewitz
Publisher:Paul W. Zitzewitz
Chapter29: Solid-state Electronics
Section: Chapter Questions
Problem 67A
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Voltage barrier is present on:
intrinsic semiconductor
doped semiconductor
both
energy gap in Ge is lower than Si, because :
O the distance between nucleus and valance shell in Ge is lower than in Si.
the distance between nucleus and valance shell in Ge is larger than in Si.
the Ge has few valance electron than Si.
Non of the above.
The biasing in diode is needed to make it :
conduct current
cutoff current
both
Transcribed Image Text:Voltage barrier is present on: intrinsic semiconductor doped semiconductor both energy gap in Ge is lower than Si, because : O the distance between nucleus and valance shell in Ge is lower than in Si. the distance between nucleus and valance shell in Ge is larger than in Si. the Ge has few valance electron than Si. Non of the above. The biasing in diode is needed to make it : conduct current cutoff current both
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