What is the value of Ic of a transistor for IE= 5.34 mA and Is= 475 µA?

Q: A useful mode of operation of a transistor is in the common -emitter configuration In this mode,…

A: Common emitter configuration is one of the configurations where the emitter is connected between the…

Q: Solve for Vo, i1, 12 & I (diodes are silicon) Vo Si 0.47K 20V- Ge SI 12 SI 0.47K

A: The cut in voltage for Germanium diode = 0.3 V Silicon diode = 0.7 V

Q: For the tronsistor in thhe folowing figure.itB is (0.02mA). B H100, then Rc value is:

A: Answer              5 K ohm

Q: 7. Consider the circuits shown in figures (a) and (b) below 2K ww- 1K ww- 10K 10 K ww ww- 10V 10V…

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Q: 2 Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in…

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Q: Which of the following statements explains CORRECTLY the decrease in resistivity of an intrinsic…

A: Solution:The statement that correctly explains"the decrease in resistivity of an intrinsic…

Q: Q°: Assume ideal diode. Find the values of the labeled voltage and current. + 3 V + 3 V 5 kn 10 kn Z…

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Q: A p-n-p transistor is used in common emitter mode in an amplifier circuit. A charge of 40 µA in the…

A: In this question we have to find the base current amplification factor. Please give positive…

Q: Determine Vcg in the transistor circuit shown in figure. The transistor is of silicon and has B =…

A: Given:VBB=5VVCC=10VRC=100ΩRB=10KΩ=10000Ωβ=150Its is a silicon transistor,for forward bias condition…

Q: If you know that the atomic weight of a metal is 132.9 and its density is 3 ^ gm / em 1.873 and that…

A: Given:  Atomic mass = 132.9  Density = 1.873 gm/cc

Q: A transistor is connected in common base mode and amplification factor is 0.98 and leakage current…

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Q: Process in which conductivity of semiconductor can be drastically increase by adding controlled…

A: The conductivity of silicon is increased by adding a very small amount of impurity which is in order…

Q: In semiconductors, the conductivity 2 poin is mainly proportional to a function of temperature:…

A: The electrical conductivity of any substance be it a conductor, an insulator or semiconductor…

Q: Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet the mobility of…

A: Here at given temperature at 300 k the intrinsic concentration of th Ge is 2.5 × 10¹⁹ m-³. It also…

Q: In a transistor amplifier =62, R = 5000 and internal resistance of the transistor is 5002. Its power…

A: NOTE-Since you have asked multiple question, we will solve the first question for you. If you want…

Q: A transistor with a height of 0.4 cm and a diameter of 0.6 cm is mounted on a circuit board. The…

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Q: Consider a semiconductor bar with w-0.1 mm, d-10 um and L-5 mm. for B-104 Wb/cm2, and a current of 1…

A: Solution: Given that w =0.1 mmd=10 μmL=5 mmB=10-4 Wb/cm2

Q: For faithful amplification by a transistor circuit, the value of VcEShould for silicon transistor А.…

A: In the given question we have to discuss about the value of  voltage of common emitter transistor…

Q: In NPN or PNP transistor: A. Ic> IE, B. IE >Ic, C. IE = Ic, D. None of the above.

A: We are authorized to answer one question at a time, since you have not mentioned which question you…

Q: Find the resistivity (2.cm) of an intrinsic semiconductor with intrinsic concentration of 8x10¹8 m³.…

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Q: In an N-type semiconductor at T = 300 K, the electron concentration varies linearly from 2 x 10^18…

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Q: For a transistor, the current amplification factor is 0.8. The transistor is connected in common…

A: Given value--- current amplification factor = 0.8 . change in base current = 6 mA. We have to…

Q: for the silicon transistor in the (5 following figure, the Q-point is (2V, .1mA), B =100, and…

A: Here in this question following will be helpful Beta = Ic /Ib Q point describe the ( VCE, IC)…

Q: What is the number of depletion layer in a transistor?​

A: A transistor is an electronic component used either to amplify or to transfer electrical signals or…

Q: The recombination rate of excess charge carrier in n-type semiconductor is function of a) majority…

A: Recombination is the mechanism that is utilized by extrinsic semiconductors to equilibrate excess…

Q: If the atomic radius of a metal that has the face-centered cubic crystal structure is 0.2718 nm,…

A: Given :    Atomic radius, r = 0.2718 nm

Q: Q.1. Determine whether each silicon diode in Fig.1 is forward biased or reversed biased. 100 V 10 n…

A: (a) Explanation: Calculate the potential across the diode. VAB=VA-VB Substitute the values. VAB=5…

Q: Six volts is applied across a 2 cm long semiconductor bar. If the average electron drift velocity is…

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Q: At 300K, the intrinsic concentration of Ge is 2.5 × 1019 m-3. Given thet m? m2 the mobility of…

A: Intrinsic concentration of Ge at 300 K n=2.5*1019/m3, mobility of electron ue=0.38 m2/V.s, mobility…

Q: A non-pure semiconductor has an energy gap of 1ev and a hole density of 1022m−3 at 300K and an…

A: The Fermi level location at 500 K is, EF=EV+kTlnNVNA

Q: What are the major differences between MOS and BJT transistors?

A: The major differences between MOS or MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) and…

Q: In a transistor if a = 100 and emitter current is 10mA, then Ic is A. 100 mA В. 10mA C. 100.1 mA D.…

A: Given Data : The emitted current for the transistor is given as Ie=10mA The alpha factor for the…

Q: Find the resistivity of an intrinsic semiconductor with intrinsic concentration of 8 × 1018 m3. The…

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Q: . A p-n-p transistor is used in common emitter mode in an amplifier circuit. A charge of 40 µA in…

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Q: The value of the collector resistor in an npn silicon transistor amplifier with Bdc= 250, VBB= 2.5…

A: Solution: (i) Calculate the base current. IB=VBB-VBERB Substitute 0.7V for VBE, 2.5V for VBB, 100kΩ…

Q: In a transistor amplifier, ß = 62, R₁ = 5000 and internal resistance of the transistor is 500. The…

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Q: Silver contains 5.8 * 1028 free electrons per cubic meter. At absolute zero, what is the Fermi…

A: Free electron density in silver (n)=5.8 * 1028 per cubic meter mass of electron (m)=9.1×10-31Kg…

Q: Q 3/Classify cach of the following as n-type or p-type semiconductors: (5 marks) a- Doped by…

A: Semiconductors with equal number of negative charge carriers electron(n) and the positive charge…

Q: Consider silicon at T=300 k. A Hall Effect device is fabricated with the following parameters:…

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Q: In a bipolar junction transistor:   A) all the three regions (the emitter, the base and the…

A: Introduction: A bipolar junction transistor (BJT) is a solid-state device. The current between two…

Q: For the silicon transistor in the following fig find Rc ,Re ,VE and VCE where Ic =2 mA

A: Given data: Common emitter current gain, β=100 Voltages: VCC=15 V; VEE=-15 V; VC=5 V Current, IC=2…

Q: The input resistance of a silicon transistor is 100 Ω. Base current is changed by 40 µA which…

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