Wires A and B, having equal lengths of 40.0 m and equal diameters of 2.94 mm, are connected in series. A potential difference of 62.9 V is applied between the ends of the composite wire. The resistances are RA = 0.0996 Q and RB = 0.570 Q. For wire A, what are (a) magnitude J of the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)? For wire B, what are (d) Jand (e) V? (f) Of what type material is B made? Resistivities of Some Materials at Room Temperature (20°C) Resistivity, p (N·m) Temperature Coefficient of Resistivity, a (K-') Material Typical Metals Silver 1.62 x 10-8 4.1 x 10-3 1.69 x 10-8 4.3 x 10-3 Copper Gold 2.35 x 10-8 2.75 x 10-8 4.0 x 10-3 Aluminum 4.4 x 10-3 0.002 x 10-3 Manganin" Tungsten 4.82 x 10-8 5.25 x 10-8 4.5 × 10-3 Iron 9.68 x 10-8 6.5 x 10-3 Platinum 10.6 × 10-8 3.9 × 10-3 Typical Semiconductors 2.5 x 103 Silicon, pure -70 x 10-3 Silicon, n-type Silicon, p-type 8.7 x 10-4 2.8 x 10-3 Typical Insulators 1010 – 1014 Glass Fused quartz -1016 "An alloy specifically designed to have a small value of a. Pure silicon doped with phosphorus impurities to a charge carrier density of 1023 m-. "Pure silicon doped with aluminum impurities to a charge carrier density of 102 m-.
Wires A and B, having equal lengths of 40.0 m and equal diameters of 2.94 mm, are connected in series. A potential difference of 62.9 V is applied between the ends of the composite wire. The resistances are RA = 0.0996 Q and RB = 0.570 Q. For wire A, what are (a) magnitude J of the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)? For wire B, what are (d) Jand (e) V? (f) Of what type material is B made? Resistivities of Some Materials at Room Temperature (20°C) Resistivity, p (N·m) Temperature Coefficient of Resistivity, a (K-') Material Typical Metals Silver 1.62 x 10-8 4.1 x 10-3 1.69 x 10-8 4.3 x 10-3 Copper Gold 2.35 x 10-8 2.75 x 10-8 4.0 x 10-3 Aluminum 4.4 x 10-3 0.002 x 10-3 Manganin" Tungsten 4.82 x 10-8 5.25 x 10-8 4.5 × 10-3 Iron 9.68 x 10-8 6.5 x 10-3 Platinum 10.6 × 10-8 3.9 × 10-3 Typical Semiconductors 2.5 x 103 Silicon, pure -70 x 10-3 Silicon, n-type Silicon, p-type 8.7 x 10-4 2.8 x 10-3 Typical Insulators 1010 – 1014 Glass Fused quartz -1016 "An alloy specifically designed to have a small value of a. Pure silicon doped with phosphorus impurities to a charge carrier density of 1023 m-. "Pure silicon doped with aluminum impurities to a charge carrier density of 102 m-.
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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Transcribed Image Text:Wires A and B, having equal lengths of 40.0 m and equal diameters of 2.94 mm, are connected in series. A potential difference of
62.9 V is applied between the ends of the composite wire. The resistances are RA = 0.0996 Q and RB = 0.570 Q. For wire A, what are
(a) magnitude J of the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)?
For wire B, what are (d) Jand (e) V? (f) Of what type material is B made?
Resistivities of Some Materials at Room Temperature (20°C)
Resistivity, p
(N.m)
Temperature Coefficient
of Resistivity, a (K-!)
Material
Typical Metals
Silver
1.62 x 10-8
4.1 x 10-3
Сopper
1.69 x 10-8
4.3 x 10-3
4.0 x 10-3
4.4 x 10-3
Gold
2.35 x 10-8
Aluminum
2.75 x 10-8
Manganin"
Tungsten
4.82 x 10-8
5.25 x 10-8
0.002 x 10-3
4.5 x 10-3
Iron
9.68 x 10-8
6.5 x 10-3
Platinum
10.6 x 10-8
3.9 x 10-3
Typical Semiconductors
2.5 x 103
Silicon, pure
Silicon, n-type
Silicon, p-type
-70 x 10-3
8.7 x 10-4
2.8 x 10-3
Турісal Insulators
1010 – 1014
Glass
Fused quartz
-1016
"An alloy specifically designed to have a small value of a.
Pure silicon doped with phosphorus impurities to a charge carrier density of 1023 m-3.
"Pure silicon doped with aluminum impurities to a charge carrier density of 10 m-.
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