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Introduction According to Moore Law, the number of transistors on electric devices doubles every

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Introduction
According to Moore Law, the number of transistors on electric devices doubles every two years. Transistors need to be designed smaller and smaller to keep the devices in the same size. However, the size of traditional silicon transistors cannot be reduced infinitely. Today, nanotechnology has become a hopeful way to overcome this problem, which is to build nano-scale transistors to satisfy Moore Law. [1]
The carbon nanotube field-effect transistor (CNTFET) technology is a significant part of nanotechnology. It is to use carbon nanotubes as the channel material to build field-effect transistors (FETs) [2]. CNTFET technology takes advantage of the unique electronic structure of graphite, thereby forming hollow cylinder. It is …show more content…

Back-gated CNTFET fabrication is the earliest technique for fabricating CNTFETs. Wrap-around gate CNTFET fabrication and Suspended CNTFET fabrication are the newest techniques to fabricate CNTFETs. [4]

Advantages and Disadvantages
Because of CNTFET’s high channel mobility and improved gate capacitance versus voltage characteristics, it is getting more and more important. As the devices become smaller, scaling the silicon MOSFET becomes the primary difficulty that people needed to face to. However, the CNTFET has helped to solve such a problem. Carbon nanotube has a high density, which can overcome the difficulties related to physical phenomena and technology limitations. Compared with other devices, CNTFET has several benefits over them. It provides better control over channel formation as a part of its design. Moreover, it offers better threshold voltage. The sub threshold conduction of CNTFET is better than others’ as well. What is more, CNTFET has a much higher speed and density in current. Therefore, those benefits make CNTFET have many advantages over others, and play an important role in electrical projects. For the specific CNTFET- DG (dual-gate) CNTFET, it provides an abrupt switching behavior which is close to theoretical limits. This property offers a

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