Introduction
According to Moore Law, the number of transistors on electric devices doubles every two years. Transistors need to be designed smaller and smaller to keep the devices in the same size. However, the size of traditional silicon transistors cannot be reduced infinitely. Today, nanotechnology has become a hopeful way to overcome this problem, which is to build nano-scale transistors to satisfy Moore Law. [1]
The carbon nanotube field-effect transistor (CNTFET) technology is a significant part of nanotechnology. It is to use carbon nanotubes as the channel material to build field-effect transistors (FETs) [2]. CNTFET technology takes advantage of the unique electronic structure of graphite, thereby forming hollow cylinder. It is
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Back-gated CNTFET fabrication is the earliest technique for fabricating CNTFETs. Wrap-around gate CNTFET fabrication and Suspended CNTFET fabrication are the newest techniques to fabricate CNTFETs. [4]
Advantages and Disadvantages
Because of CNTFET’s high channel mobility and improved gate capacitance versus voltage characteristics, it is getting more and more important. As the devices become smaller, scaling the silicon MOSFET becomes the primary difficulty that people needed to face to. However, the CNTFET has helped to solve such a problem. Carbon nanotube has a high density, which can overcome the difficulties related to physical phenomena and technology limitations. Compared with other devices, CNTFET has several benefits over them. It provides better control over channel formation as a part of its design. Moreover, it offers better threshold voltage. The sub threshold conduction of CNTFET is better than others’ as well. What is more, CNTFET has a much higher speed and density in current. Therefore, those benefits make CNTFET have many advantages over others, and play an important role in electrical projects. For the specific CNTFET- DG (dual-gate) CNTFET, it provides an abrupt switching behavior which is close to theoretical limits. This property offers a
What is Moore 's Law? I began my research journey trying to figure out what it means and why it is important to me. I pondered this for some time before beginning my research on Moore’s Law. I wasn’t exactly sure even where to begin but the more I found out about Moore’s Law the more I became even more interested. Gordon Moore set me on this exploration ahead.
The use of nano-materials and extreme precision micro-engineering has the potential for great improvement in the world of electronics and information technology by providing smaller, faster, and more powerful computers and this has been at the forefront of the nanotechnology commercialization . Great examples of how nanotechnology is currently being used in these fields are products such as processors, data storage, and memory components made with nano-materials, TVs, monitors and even smartphone screens that use organic light-emitting diodes (OLED), and waterproof electronics such as smartphones due to the application of nano-coatings
The decline is a symptom of a cultural decay. Less and less college graduates are leaving with engineering degrees, and in 2006 more people have received sports- exercise degrees than electrical- engineering degrees; because of the decrease of students with engineering degrees, America is losing it’s place as the world’s science leader, according to the National Academy of Sciences report. The report also stated China has graduated 600,000 engineers, India 350,000, and America only 70,000. The United States has no hope if for every 1 qualified engineer there are 11 Chinese or
The idea of nanotechnology was first discovered by nobel prize winner physicist Richard Feynman in 1959. In the 1980 the first SPM was developed by IBM scientist in zurich. In 1991 a new form of carbon was discovered, the nanotube which was soon later on used for one of the building block for nanomaterial and nanomachines. In 1986 a book written by Eric Drexler spared the public interest in nanotechnology since the the NNI started by president Bill Clinton invested millions which in 2020 would turn into one trillion dollars. Nanotechnology is used in many things today like sunscreen, cars, in computers, medicine and in many other things to come in the future and in today's day and
Carbon nanotube have many structures, varing in length, thickness, and number of layers. Carbon nanotubes are graphene that has been rolled up into a tube-shape. Most significant use for carbon nanotubes is in structural reinforcement. Carbon nanofibres are extremely thin and light weighted, weighing about twentieth of a gram with one whole kilometer long. However, it was discovered that nanofibres are the ten times stronger than the strongest material, thus could strengthen almost any material. One of the significant uses of nanotube is acting as a carrier to transport drugs into the body. However, the use of nanotube in health care has become a debatable topic in today's society. Even though a nanotube is able to keep a particaular drug safe in its cage until it reaches a desired site where it can be released, scientists in Scotland have claimed that inhaling carbon nanotubes could be just as harmful as breathing in asbestos. They stated that "carbon nanotube can cause mesothelioma, a deadly cancer of the membrane lining in the body's internal
As more electrons were introduced, the net carrier concentration started to decrease until the electrons became the majority carriers. This process may explain the change of conduction type and carrier concentrations. The carrier mobility, however, decreased gradually from 6.52 cm2/V*s to 4.30 cm2/V*s as cobalt doping increased from 2 at% to 6 at%. This phenomenon could be explained as the decreased mean free path of charged carriers because of the larger size of the incorporated cobalt ions than the original iron ions. After switching to n-type, the increasing carrier concentration may also contributed to the reducing of carrier mobility. As a consequence, cobalt doping served well as an n-type dopant after 3 at% doping level.
The author would like to express his sincere gratitude to his supervisor Dr. Manish K Tiwari for the guidance. The motivation, enthusiasm, and immense knowledge of this supervisor encouraged the author a lot. The authors would also like to thank Dr. Parashkev Nachev for his innovative ideas and the help in brain model design. Besides, the author’s thanks also goes to the friends in the Nanoengineered Systems Lab: Zhuyang Chen, Feihuang Fang and Dr. Chaoyi Peng for their encouragement and useful comments.
Nanotechnology is "the design, characterisation, production and application of structure, devices or systems by controlled manipulation of size and shape at the nanoscale." (Nanomed, 2005) This should produce a structure or device with at least one new or superior characteristic. The nanoscale is less than 100nm. CNTs have shown a great deal of potential use as nano carriers for delivering anti cancer drugs directly to the sight of action. However, CNTs must be functionalized, as pure CNTs are difficult to incorporate into biological structures due to their insolubility and their tendency to bundle up. There are two main ways to functionalize CNTs yet the best method is by oxidation leading to carboxyl based couplings. The tube caps openings are created and holes in the side wall form by process of oxidation involving strong acids. These carboxylic group allow covalent coupling with other molecules by amide or ester bonds (see figure 2.1) as a result, CNTs can be conjugated with anti cancer drugs. It is a benefit to functionalize CNTs as "functionalized CNTs have been shown in many studies to be able to cross cell membranes" (Pantarotte et al.) this means that CNTs can now be used to deliver anti cancer drugs into direct cells.
Reducing toxicity of therapeutic materials is the main aim of developing drug-delivery systems that is achieved using CNTs.1, 2 The intense interest in CNTs is due to the capability of adsorbing or conjugating with a wide variety of medicinal molecules and their unique chemical and physical properties and potential applications from high strength and low weight nanocomposite materials to electronic devices. Drug molecule penetrate through the cancer cell by CNT to treat diseases and thereby potentially reducing the drug side effects by preserving the non-targeted tissues of the patients.3-5 The
Fig 19: Comparative analysis of V-I characteristics of MESFET at different W & VGS = 0.0V
The positive electrode is a composite of MnO2 nanoparticles inside multi-walled carbon nanotubes. This aims to reduce toxicity and minimise capacitance loss with power transmitted by stable and reversible Faradaic reaction.
Electrochemical behavior and convoluted voltammetry of carbon nanotube modified with AQ and NB functional groups
Spin is one of the most intriguing quantum properties carried by elementary particles. Incorporation of electron spin into the operation of semiconductor devices enables novel functionalities and increased performance for information processing and metrology. (-- removed HTML --) (-- removed HTML --) 1,2 (-- removed HTML --) (-- removed HTML --) Among the most promising spin-based semiconductor devices is the spin field effect transistor (spinFET), (-- removed HTML --) (-- removed HTML --) 3 (-- removed HTML --) (-- removed HTML --) considered a future candidate for high performance digital computing and memory with ultralow energy needs. (-- removed HTML --) (-- removed HTML --) 4 (-- removed HTML --) (-- removed HTML --) (--
Here we report the fabrication of a flexible all carbon field effect transistor (FET) using a low cost, recyclable and biodegradable cellulose paper as both substrate as well as dielectric and pencil graphite as source, drain, channel and gate without using any other expensive, toxic or non-biodegradable materials. The electron and hole mobility’s of FET are observed to be 180 and 200 cm2v-1s-1 respectively which are comparable to the recently reported values of paper FET with polymer dielectric and cellulose composite dielectrics. The FET was utilized as a strain sensor which shows good sensitivity for low strains of both tensile and compressive type. The mobility of the FET increases with increase in compressive strain and decreases with increase in tensile strain. The sensitivity of the FET sensor increases with the increase in the gate voltage.
We have now discussed the two extremes in electronic materials; a conductor, and an insulator we will now move to a material that lies in between these two, a semiconductor. The