A gallium arsenide semiconductor at T = 300 K is doped with impurity concentration N = The mobility u is 7500 cm²/V – s. For an applied field of 10 V/cm the drift current density is 10° cm.
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- A silicon sample at room temperature is doped with gallium (Ga) from one side such that Ndoping=38.85x1015e−x/α , α = 0.5 µm, and Ndoping >> ni. Calculate the electric field at x= 1µm.A silicon semiconductor is in the shape of a rectangular bar with a crosssectional area of 10 μm × 10 μm, a length of 0.1 cm, and is doped with Arsenic at 5 × 1016 atoms/cm3 concentration. (T = 300 K).a) determine the current if 5 V is applied across the length. b) repeat part (a) if the length is reduced to 0.01 cm. c) calculate the average drift velocity of electrons in parts (a) and (b). (µn=1350 cm2/volt-s)A silicon sample is supporting an electric field of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
- The ability to move holes in a semiconductor at T = 300 K is 500 cm? / V is the voltage given as 26mV. what is the diffusion constant of the holes accordinglyAssume D = D0e^–Ea/kT is the diffusion coefficient of boron in silicon surface, whereD0 = 10.5 cm^2/s and Ea = 3.7 eV. The substrate is N-type silicon doped to 10^15 cm^3.N0 = 10^15 cm^2 of boron is introduced just below the silicon surface.(a) What is the junction depth after a 1-h drive-in at 1,100°C?(b) By how much will the junction depth change after 10^6 h (~100 years) of operation at100°CAn n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free concentration of the carriers is 2.5x10^13/cm^3, what is the hole density at this temperature?
- A sample of n-type silicon semiconductor has the following properties:Donor density Ndis 5x1019per cm3Mobility of electron is 1500 Mobility of hole is 500Electron charge q = 1.602x10-19coulombs.Intrinsic carrier density ni= 1.45x1010per cm3a)Find the density of holes and electrons in this sampleb)Find the conductivity of the given sample if the. c)What is the resistivity of the given sample?An electron gradient of +1016/(cm3·μm) exists in a semiconductor. What is the diffusion current density at room temperature if the electron diffusivity is 20cm2/s?Repeatfor a hole gradient of+1020/cm4 with Dp =4 cm 2/s.Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration resistivity, and mobilityof the semiconductor sample.
- SEMICONDUCTOR DEVICES n-type silicon sample with a donor impurity concentration of 2x1015 cm–3 is converted into p-type by gallium (Ga) diffusion so that resistivity at T= 80 °C is (100/48) Ω.cm. µp (80 °C) =300 cm2/V.s, µn (80 °C) =900 cm2/V.s and ni (80 °C) = 3x1011 cm–3. Calculate the hole concentration after converting into p-type?The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differHall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A = 2.5 × 10-3cm2, I = 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample.