1. A silicon pn junction at T = 300 K has doping concentrations of Na = 5 x 1015 cm-3 and Nd = 5 x 1016 cm 3. n₁ = 1.5 x 1010 cm³. = 11.7. A reverse-biased voltage of VR = 4 V is applied. Determine (a) Built-in potential Vbi (b) Depletion width Wdep (c) Xn and Xp (d) The maximum electric field Emax N-type Na 0 P-type Na

1. A silicon pn junction at T = 300 K has doping concentrations of Na = 5 x 1015 cm-3 and Nd = 5 x 1016 cm 3. n₁ = 1.5 x 1010 cm³. = 11.7. A reverse-biased voltage of VR = 4 V is applied. Determine (a) Built-in potential Vbi (b) Depletion width Wdep (c) Xn and Xp (d) The maximum electric field Emax N-type Na 0 P-type Na

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 16CQ: Why does the horizontal Line in the graph in Figure 9.12 suddenly stop at the Fermi energy? Figure...

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