A silicon PN diode has reverse saturation current of 20 µA at temperature 200 Calculate its reverse saturation current at 600C. 8. Determine the diffusion capacitance due to holes in a Gediode when forward bias current is I-26mA.given themean life time of hole is 20uS at T-300K9. Design a n-section or CLC filter for a full wave rectifier with the values ofoutput dc voltage of 10 V and a load current of 150 mA and to have aripple factor of 1 %.10.A silicon PN diode has reverse saturation current of 20 µAat temperature 20°C. Calculate its reverse saturation current at 60°C.AwM

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Answered: A silicon PN diode has reverse…

A silicon PN diode has reverse saturation current of 20 µA at temperature 200 Calculate its reverse saturation current at 600C.

Glencoe Physics: Principles and Problems, Student Edition

1st Edition

ISBN:9780078807213

Author:Paul W. Zitzewitz

Publisher:Paul W. Zitzewitz

Chapter29: Solid-state Electronics

Section: Chapter Questions

Problem 67A

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Question

A silicon PN diode has reverse saturation current of 20 µA at temperature 20⁰ Calculate its reverse saturation current at 60⁰C.

8. Determine the diffusion capacitance due to holes in a Ge
diode when forward bias current is I-26mA.given the
mean life time of hole is 20uS at T-300K
9. Design a n-section or CLC filter for a full wave rectifier with the values of
output dc voltage of 10 V and a load current of 150 mA and to have a
ripple factor of 1 %.
10.
A silicon PN diode has reverse saturation current of 20 µA
at temperature 20°C. Calculate its reverse saturation current at 60°C.
AwM

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