Consider a p+-n Si diode with NA = 1018 cm-3 and ND = 1016 cm-3. The hole diffusion coefficient in the n-side is 10 cm2/s and carrier lifetime τp =10-7 s. The device area is 10-4 cm2. Calculate the reverse saturation current and the forward current at a forward bias of 0.7 V at 300 K.

Consider a p+-n Si diode with NA = 1018 cm-3 and ND = 1016 cm-3. The hole diffusion coefficient in the n-side is 10 cm2/s and carrier lifetime τp =10-7 s. The device area is 10-4 cm2. Calculate the reverse saturation current and the forward current at a forward bias of 0.7 V at 300 K.

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 9P

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Question

Consider a p⁺-n Si diode with N_A = 10¹⁸ cm^-3 and N_D = 10¹⁶ cm^-3. The hole diffusion coefficient in the n-side is 10 cm²/s and carrier lifetime τ_p =10^-7 s. The device area is 10^-4 cm². Calculate the reverse saturation current and the forward current at a forward bias of 0.7 V at 300 K.

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