1. Consider a contact between Al and n-type Si doped at N=10¹ cm³. T=300K. In this case, the effective density of states in conduction band is N-2.8X10¹ cm. a. Draw the energy-band diagrams of the two materials before the junction is formed. b. Draw the ideal energy band at zero bias after the junction is formed. Calculate Dao. Xa, and Emax for part (b). d. Repeat parts (b) and (c) using the data in the figure. c. Barrier height, e (CV) 1.0 0.8 0.6 04- 0.2 3.0 GaAs Si Mg Al Ag W L 4.0 Au Pd 1 5.0

1. Consider a contact between Al and n-type Si doped at N=10¹ cm³. T=300K. In this case, the effective density of states in conduction band is N-2.8X10¹ cm. a. Draw the energy-band diagrams of the two materials before the junction is formed. b. Draw the ideal energy band at zero bias after the junction is formed. Calculate Dao. Xa, and Emax for part (b). d. Repeat parts (b) and (c) using the data in the figure. c. Barrier height, e (CV) 1.0 0.8 0.6 04- 0.2 3.0 GaAs Si Mg Al Ag W L 4.0 Au Pd 1 5.0

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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