•35 SSM www What mass of phosphorus is needed to dope 1.0 g of silicon so that the number density of conduction electrons in the silicon is increased by a multiply factor of 106 from the 1016 m-3 in pure silicon.
Q: I. A bar of intrinsic silicon having a cross section area of 3 x 10m² has an n= 1.5 x 1016m-30 If He…
A: SOlution: givent hat A = 3x10-4 m2 ni = 1.5x1016 m-3 µe = 0.14 m2/Vs µP = 0.05 m2/Vs
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- Calculate the linear density (in units of atoms/nm) along the [101][101] direction in copper.What mass of phosphorus is needed to dope 1.0 g of silicon so that the number density of conduction electrons in the silicon is increased by a multiply factor of 106 from the 10^16 m-3 in pure silicon.Figure E21.22 shows the bonding of cytosine and guanine. The O—H and H—N distances are each 0.110 nm. In this case, assume that the bonding is due only to the forces along the O—H—O, N—H—N, and O—H—N combinations, and assume also that these three combinations are parallel to each other. Calculate thenet force that cytosine exerts on guanine due to the preceding three combinations. Is this force attractive or repulsive? Help please. I have been stuck for hours now
- If A=(6.00i+8.00j) units, B=(-8.00i+3.00j) units, and C=(26.0i+19.0j) units, determine a and b such that aA+bB+C= 0Suppose a pure Si crystal has 5 × 1028 atoms m-3. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that ni =1.5 × 1016 m-3.if a wafer with 350μm thick resist is baked on a hot plate that is 0.1◦ off-horizontal, what will be the resist non-uniformity due to gravitational flow?
- At what pressure, in atmospheres, would the number of molecules per unit volume in an ideal gas be equal to the number density of the conduction electrons in copper, with both gas and copper at temperature T =300 K?Show that the moment of inertia of a diatomic molecule is I=r02 , where is the reduced mass, and r0 is the distance between the masses.What are the maximum values of the room temperature values (300 K) of the diffusion coefficients for electrons and holes in silicon based on the mobilities as shown ?
- You are working in a factory that produces long bars of copper with a square cross section. In one section of the production process, the bars must slide down a plane inclined at an angle θ = 21.0° to the horizontal. It has been found that the bars travel with too high a speed and become dented or bent when they arrive at the bottom of the plane and must be discarded. In order to prevent this waste, you devise a way to deliver the bars at the bottom of the plane at a lower speed. You replace the inclined plane with a pair of parallel metal rails, shown, separated by a distance ℓ = 2.00 m. The smooth bars of mass m = 1.00 kg will slide down the smooth rails, with the length of the bar always perpendicular to the rails. The rails are immersed in a magnetic field of magnitude B, and a resistor of resistance R = 1.00 Ω is connected between the upper ends of the rails. Determine the magnetic field necessary in your device so that the bars will arrive at the bottom of the plane with a…Calculate the value of ni in silicon at room temperature (300 K).Is it reasonable to expect superconductivity in a "glass," a material with almost no crystalline structure? Why or why not, if that's the case?