5.In a N-type semiconductor, the position of Fermi-levela. Is lower than the center of energy gapb. Is at the center of energy gapc. Is higher than the center of energy gap1d. Can be any where6. The energy gap in a semiconductora. Increases with temperatureb. Does not change with temperaturec. Decreases with temperatured. Is zero7. In an intrinsic semiconductor, the mobility of electrons in the conduction bandis:a. Less than the mobility of holes in the valence bandb. Zeroc. Greater than the mobility of holes in the valence bandd. None of the above

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Answered: 5.In a N-type semiconductor, the…

5.In a N-type semiconductor, the position of Fermi-level a. Is lower than the center of energy gap b. Is at the center of energy gap c. Is higher than the center of energy gap

Glencoe Physics: Principles and Problems, Student Edition

1st Edition

ISBN:9780078807213

Author:Paul W. Zitzewitz

Publisher:Paul W. Zitzewitz

Chapter29: Solid-state Electronics

Section29.1: Conduction In Solids

Problem 24SSC

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Question

5.In a N-type semiconductor, the position of Fermi-level
a. Is lower than the center of energy gap
b. Is at the center of energy gap
c. Is higher than the center of energy gap
1
d. Can be any where
6. The energy gap in a semiconductor
a. Increases with temperature
b. Does not change with temperature
c. Decreases with temperature
d. Is zero
7. In an intrinsic semiconductor, the mobility of electrons in the conduction band
is:
a. Less than the mobility of holes in the valence band
b. Zero
c. Greater than the mobility of holes in the valence band
d. None of the above

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