A p-n junction Si solar cell is used in a concentrating solar system at the temperature of 300K. The area of the solar cell is 50cm? and the fill factor of the device is 82%. The depletion width of the solar cell without bias voltage is 2.1µm. Under light illumination, the carrier lifetimes of electrons and holes are 1 × 10° s and the optical generation rate inside the silicon solar cell is assumed to be a constant value of G = 1 × 10²² EHP cm³s'. For Si, the electron mobility is µ, = 1350 cm²/Vs and hole mobility 4, = 480 cm³/Vs; €, =11.9. (a) Calculate the short circuit current Isc of the device under the light illumination. (b) Assuming the open circuit voltage Voc of the deivce is 0.6V, calculate the reverse saturation current density of the p-n junction

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B4. A p-n junction Si solar cell is used in a concentrating solar system at the temperature of 300K.
The area of the solar cell is 50cm? and the fill factor of the device is 82%. The depletion
width of the solar cell without bias voltage is 2.1µm. Under light illumination, the carrier
lifetimes of electrons and holes are 1 × 10° s and the optical generation rate inside the silicon
solar cell is assumed to be a constant value of G= 1 × 1022 EHP cms. For Si, the electron
-3
mobility is µ, = 1350 cm³/Vs and hole mobility 4 = 480 cm²/Vs; €, =11.9.
(a) Calculate the short circuit current Isc of the device under the light illumination.
(b) Assuming the open circuit voltage Voc of the deivce is 0.6V, calculate the reverse
saturation current density of the p-n junction
(c) The light power illuminated on the solar cell per unit area is 5×10° (W/m³), what is the
efficiency of the solar cell?
Transcribed Image Text:B4. A p-n junction Si solar cell is used in a concentrating solar system at the temperature of 300K. The area of the solar cell is 50cm? and the fill factor of the device is 82%. The depletion width of the solar cell without bias voltage is 2.1µm. Under light illumination, the carrier lifetimes of electrons and holes are 1 × 10° s and the optical generation rate inside the silicon solar cell is assumed to be a constant value of G= 1 × 1022 EHP cms. For Si, the electron -3 mobility is µ, = 1350 cm³/Vs and hole mobility 4 = 480 cm²/Vs; €, =11.9. (a) Calculate the short circuit current Isc of the device under the light illumination. (b) Assuming the open circuit voltage Voc of the deivce is 0.6V, calculate the reverse saturation current density of the p-n junction (c) The light power illuminated on the solar cell per unit area is 5×10° (W/m³), what is the efficiency of the solar cell?
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