QUESTION Consider a uniformly doped silicon p'-n junction with acceptor concentration of 7x10“ cm', 15x10m of the space charge width in the n-region and 5x10 m in the pregion. Determine the temperature at which the built-in potential decreases by 10 percent.(n=10" cm )

Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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QUESTION
Consider a uniformly doped silicon p'-n junction with acceptor concentration of
7x10“ cm, 15x10“ m of the space charge width in the n-region and 5x10 m in
the pregion. Determine the temperature at which the built-in potential
decreases by 10 percent.( n=10" cm)
Transcribed Image Text:QUESTION Consider a uniformly doped silicon p'-n junction with acceptor concentration of 7x10“ cm, 15x10“ m of the space charge width in the n-region and 5x10 m in the pregion. Determine the temperature at which the built-in potential decreases by 10 percent.( n=10" cm)
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