Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 105 cm, n= 10"cm, = 1000 em?/V-sec, ,= 500 cm'V-sec, To-2x10's, Tyo=1×10's and the applied electric field is zero. A light beam in x-direction was applied to the sample resulting excess e-h pair of 2x102 cm at x=0(edge of the sample). Assuming steady state, then hole diffusion current density at x=20um is .. LA/cm?. (use kT=0.025eV at 300K) a)43 b)62 c) 93 d) 185 e) 280

Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 105 cm, n= 10"cm, = 1000 em?/V-sec, ,= 500 cm'V-sec, To-2x10's, Tyo=1×10's and the applied electric field is zero. A light beam in x-direction was applied to the sample resulting excess e-h pair of 2x102 cm at x=0(edge of the sample). Assuming steady state, then hole diffusion current density at x=20um is .. LA/cm?. (use kT=0.025eV at 300K) a)43 b)62 c) 93 d) 185 e) 280

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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