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A Si pn-junetion has a cross seetional area of 1x10 cm, at 300KA forward bias voltage of v results in 1.5x101 cm excess holes at the edge position of the depletion region in the a-side of the junction, assuming a hole lifetime of 1 pa, then the hole current at a penetration depth of 5 jum in the neutral n-region will be: O S460e-5 A O s894e 6 A O 166Se 8 A O2574e 6 A

A Si pn-junetion has a cross seetional area of 1x10 cm, at 300KA forward bias voltage of v results in 1.5x101 cm excess holes at the edge position of the depletion region in the a-side of the junction, assuming a hole lifetime of 1 pa, then the hole current at a penetration depth of 5 jum in the neutral n-region will be: O S460e-5 A O s894e 6 A O 166Se 8 A O2574e 6 A

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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A Si pn-junetion has a cross seetional area of 1x10 c, at 300xa forward bias voltage of 4v results in 1.5x10t cm excess holes at the edge position of the depletion region in the a-side of the junction, assuming a hole lifetime of 1 pe, then the hole current at a penetration depth of 5 um in the neutral n-region will be; O S460e5 A O 5694e 6 A O 1.66Se 8 A O 2574e 6 A O 1800-6A
Transcribed Image Text:A Si pn-junetion has a cross seetional area of 1x10 c, at 300xa forward bias voltage of 4v results in 1.5x10t cm excess holes at the edge position of the depletion region in the a-side of the junction, assuming a hole lifetime of 1 pe, then the hole current at a penetration depth of 5 um in the neutral n-region will be; O S460e5 A O 5694e 6 A O 1.66Se 8 A O 2574e 6 A O 1800-6A
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