An abrupt one-side silicon p*-n junction has NA = 1x1019 cm3 and No = 5 x1015 cm3. Assume T=300K. (a) Calculate injected hole concentration at a forward bias voltage of 0.25V at Xn. If µ, = 500 cm²N.s, L,=1.14x 10-3 cm, forward voltage is 0.25V and the recombination lifetime t, = 107s.

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3.
An abrupt one-side silicon p*-n junction has NA = 1x1019
cm3 and Np = 5 x1015 cm3. Assume T=30OK.
19
(a) Calculate injected hole concentration at a
forward bias voltage of 0.25V at xn.
If H, = 500 cm²N.s, L,-1.14x 10-3 cm, forward voltage is
0.25V and the recombination lifetime T, = 107s.
(b) Calculate diffusion current and recombination
current density components.
(c) Calculate the forward current density
(= J Recomb +J_diff)
(d) Comment on what mechanism dominates forward
current characteristic.
(e) Comment on ideality factor (n). Do not calculate n.
qn W
Recombination current density = 27
D n
Diffusion current density = 4
AT
T. N,
Transcribed Image Text:3. An abrupt one-side silicon p*-n junction has NA = 1x1019 cm3 and Np = 5 x1015 cm3. Assume T=30OK. 19 (a) Calculate injected hole concentration at a forward bias voltage of 0.25V at xn. If H, = 500 cm²N.s, L,-1.14x 10-3 cm, forward voltage is 0.25V and the recombination lifetime T, = 107s. (b) Calculate diffusion current and recombination current density components. (c) Calculate the forward current density (= J Recomb +J_diff) (d) Comment on what mechanism dominates forward current characteristic. (e) Comment on ideality factor (n). Do not calculate n. qn W Recombination current density = 27 D n Diffusion current density = 4 AT T. N,
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