5) Si at 300K contains acceptor atoms at a concentration of Na = 5 × 1015cm-3. Donor atoms are added forming an n-type compensated semiconductor such that the fermi level is 0.215eV below the conduction band edge. What concentration of donors should be added?

Delmar's Standard Textbook Of Electricity
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ISBN:9781337900348
Author:Stephen L. Herman
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Chapter1: Atomic Structure
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Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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5)
Si at 300K contains acceptor atoms at a concentration of Na = 5 x 1015cm-3. Donor atoms are added
forming an n-type compensated semiconductor such that the fermi level is 0.215eV below the conduction band edge.
What concentration of donors should be added?
Transcribed Image Text:5) Si at 300K contains acceptor atoms at a concentration of Na = 5 x 1015cm-3. Donor atoms are added forming an n-type compensated semiconductor such that the fermi level is 0.215eV below the conduction band edge. What concentration of donors should be added?
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