Answered: A silicon wafer is oxidized in dry O2…

A silicon wafer is oxidized in dry O2 at 1100 oC for 1 hour. (a) What is the thickness of the oxide grown? (b) How much additional time is required to grow 0.6 μm more oxide in wet O2 at 1200 oC?

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 56P: The measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of...

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Question

A silicon wafer is oxidized in dry O₂ at 1100 ^oC for 1 hour.

(a) What is the thickness of the oxide grown?

(b) How much additional time is required to grow 0.6 μm more oxide in wet O₂ at 1200 ^oC?

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