(a)State two (2) differences between BJT and FET.(b) Figure Q.1(a) shows a MOSFET amplifier constructed using E-MOSFET.Given that VGS(TH) = 2 V and k = 0.4×10-³ A/V².VDD=12 VRD=600 SZHov.C₂Ro = 10 ΜΩΣконнC₁Figure Q.1(a)(1)Draw the transfer characteristic curve (IDs vs VGs) for VGs = 0 V to 14 V ona graph paper.(ii) Using the drawn transfer curve in question b(i), graphically determine the transistoroperating point (IDQ and VGSQ).(iii) Determine VDSQ.

The required parameters can be calculated by using DC analysis of the MOSFET amplifier.

Answered: (a) State two (2) differences between…

(a) State two (2) differences between BJT and FET. (b) Figure Q.1(a) shows a MOSFET amplifier constructed using E-MOSFET. Given that VGS(TH)=2 V and k=0.4×10-³ A/V².

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Concept explainers

BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.

Question

(a)
State two (2) differences between BJT and FET.
(b) Figure Q.1(a) shows a MOSFET amplifier constructed using E-MOSFET.
Given that VGS(TH) = 2 V and k = 0.4×10-³ A/V².
VDD=12 V
RD=600 SZ
Hov.
C₂
Ro = 10 ΜΩΣ
конн
C₁
Figure Q.1(a)
(1)
Draw the transfer characteristic curve (IDs vs VGs) for VGs = 0 V to 14 V on
a graph paper.
(ii) Using the drawn transfer curve in question b(i), graphically determine the transistor
operating point (IDQ and VGSQ).
(iii) Determine VDSQ.

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