a. Using Eq. (1.2), determine the diode current at 20°C for a silicon diode with n = 2, 1, 0.1 µA at a reverse-bias potential of –10 V. b. Is the result expected? Why?
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- Using constant-voltage diode model, where VDO = 0.5 V, plot vo versus vi. Make sure to show all steps, initial plots with dashed lines, final plot, amplitudes, slopes, intersection with axis, etc.For a silicon pn junction under forward biased condition, the reverse saturation current is 10 nA. If the value of the forward voltage across the diode is 0.5 V and the observation is being made at 300 K, then what will be the value of the diode current?Using Schockley’s equation;i. Determine the diode current at 20 ◦C, for a silicon diode with Is = 50 nA and an applied forward bias of 0.6V.ii. Repeat part i, for T = 100 ◦C, assuming that Is has increased to 5.0 µA.
- Suppose a Schottky barrier diode can be modeled by the diode equation in Eq. as shown with IS =10−7 A. (a) What is the diode voltage at a current of 50 A? (b) What would be the voltage of a pn junction diode with IS =10−15 A and n =2?Consider the diode circuit shown below. If in the given circuit, Vs is replaced by a 12V battery and diodes D1 & D2 are considered ideal, what is the potential Vout equal to?Given a silicon diode current of 6mA and reverse current 1nA, find the forward diode voltage VD in volts.
- Compute the value of DC resistance and AC resistance of a Germanium junction diode at 250C with reverse saturation current, I0 = 25µA and at an applied voltage of 0.2V across the diode.What is the small-signal diode resistance rd at room temperature for ID = 1.5 mA? What is the small-signal resistance of this diode at T = 100◦C?Hall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A = 2.5 × 10-3cm2, I = 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample.
- Suppose a drift current density of 5000 A/cm2 exists in the neutral region on the n-type side of a diode that has a resistivity of 0.5 Ω· cm. What is the electric field needed to support this drift current density?Briefly discuss the difference between Diode Piecewise-linear model, Simplified model, and Ideal device/ equivalent circuit. Study the diode specification sheets of a 1N4001 and 1N5401 diodes provided by the manufacturer and compare their difference. Give typical application of each. Discuss briefly how to test junction diode.Make a sketch of the I–V characteristic curve for a diode with Is = 0.02 pA for VD values from zero to 0.7 V. Use the approximation ID = Is e^(Vd/VT) What is the slope of a line tangent to the curve at ID = 2 mA?