What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 6.3*10^14/cc, 1000 times more donor doping, and forward bias of0.54 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation.
What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 6.3*10^14/cc, 1000 times more donor doping, and forward bias of0.54 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation.
Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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