, An abrupt and uniformly doped Silicon p-n junction has doping levels of N,=10" cm and Na=1015 cm³. Draw the energy band diagram of the junction to scale.
Q: 4. For a silicon p+-n abrupt junction with Np=5×1015 cm³, find the depletion layer width at…
A: (4) It is given that: ND=5×105 cm-3
Q: B) The conductivity for n-side is 1500 s/m and for p-side is 400s/m in pn junction, while the…
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Q: 2. A silicon specimen is doped with 4.73 x1010/cm³ Antimony and 3.57x1010/cm³ Aluminum. a) Calculate…
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Q: 2. The concentration of donor impurity atoms in silicon is Nd = 1015 cm-3. Assume an electron…
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Q: For an ideal silicon p-n abrupt junction with NA = 1017 cm-3 and ND = 1015 cm-3 (a)calculate Vbi at…
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Q: drift current density of 120A/cm2 is established in n-type silicon with an applied electric field of…
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Q: 3. Suppose we have a pn junction that is slightly asymmetric. The p-type Si is doped to 10" cm"…
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Q: 1) A silicon based pn-junction at room temperature is doped such that N = 10¹5 cm-³ and N₁ = 4 x…
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Q: 22. For the cIrcult shown In the figure below, assume that diodes D,, D, and D, are Ideal.…
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Q: i. A silicon sample is uniformly doped p-type with Na=1015/cm³. At T=0 K, what are the equilibrium…
A: Given data:
Draw energy band diagram
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- What is CEMF?For a silicon pn junction, the reverse saturation current at 20o C is 10 pA. What will be reverse saturation current at 40o C if all other parameters expect temperature remains same?Using constant-voltage diode model, where VDO = 0.5 V, plot vo versus vi. Make sure to show all steps, initial plots with dashed lines, final plot, amplitudes, slopes, intersection with axis, etc.
- Compute the value of DC resistance and AC resistance of a Germanium junction diode at 250C with reverse saturation current, I0 = 25µA and at an applied voltage of 0.2V across the diode.A diode is fabricated with NA >>ND. What value of doping is required on the lightly doped side to achieve a reverse-breakdown voltage of 750 V if the semiconductor material breaks down at a field of 300 kV/cm?The diode current in a p-n junction is modeled exponentially (given below.) When the p-n junction is polarized with 0.7V and 0.75V, the currents flowing through the diode are again measured on the basis of 1.36 mA and 7.20 mA. Accordingly, what is the ideality factor? (Note: Take the thermal voltage as mV)
- A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 AConsider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?A drift current density of 120A/cm2 is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration. 2.5M 2. The circuit in figure
- For an ideal silicon p-n abrupt junction with NA = 1017 cm-3 and ND = 1015 cm-3(a)calculate Vbi at 250, 300, 350, 400, 450 and 500 K and plot Vbi versus T. (b) comment on your result in terms of energy band diagram. (c) find the depletion layer width and the maximum field at zero bias for T = 300 KConsider the diode circuit shown below. If in the given circuit, Vs is replaced by a 12V battery and diodes D1 & D2 are considered ideal, what is the potential Vout equal to?Using Schockley’s equation;i. Determine the diode current at 20 ◦C, for a silicon diode with Is = 50 nA and an applied forward bias of 0.6V.ii. Repeat part i, for T = 100 ◦C, assuming that Is has increased to 5.0 µA.