A slice of intrinsic silicon bar is 3 mm long and has a rectangular cross-section 50 µm x 10 µm. At 300 K, determine the electric field intensity in the bar and the voltage across the bar when a steady current of 2 µA is measured. Take the value of resistivity p = 2.30 × 105 Ncm at room temperature (300 K).

Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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A slice of intrinsic silicon bar is 3 mm long and has a rectangular cross-section 50 µm x 10 um.
At 300 K, determine the electric field intensity in the bar and the voltage across the bar
when a steady current of 2 µA is measured. Take the value of resistivity p = 2.30 x
105 Nem at room temperature (300 K).
Transcribed Image Text:A slice of intrinsic silicon bar is 3 mm long and has a rectangular cross-section 50 µm x 10 um. At 300 K, determine the electric field intensity in the bar and the voltage across the bar when a steady current of 2 µA is measured. Take the value of resistivity p = 2.30 x 105 Nem at room temperature (300 K).
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