sheets Consider a pn junction diode at 300 K under forward applied bias 0.7 V. To design a diode with hole and electron current densities 5 A/cm? and 2 A/cm2 respectively at the edges of space charge region, determine the donor concentration and acceptors concentration in n and p semiconductors of the pn junction. Dn 25 cm?/s 10 cm2/s Dp 5x10-7s 5x10-7 s Tno Tpo 1.5x1010 cm 3 ni Once you upload files from your second device, click on CSync to ch OCamera

Introductory Circuit Analysis (13th Edition)
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Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Consider a pn junction diode at 300 K under forward applied
bias 0.7 V. To design a diode with hole and electron current
densities 5 A/cm2 and 2 A/cm² respectively at the edges of
space charge region, determine the donor concentration and
acceptors concentration in n and p semiconductors of the pn
junction.
25 cm?/s
Dn
10 cm?/s
Dp
5x10-7s
5x107s
Tno
Tpo
1.5x1010 cm 3
n;
CSync
to ch
Once you upload files from your second device, click on
Camera
50f065047c73f&bd:
F9jdF9jaA%3D%3D&tsi=163&et=#
Transcribed Image Text:Upload answer sheets Consider a pn junction diode at 300 K under forward applied bias 0.7 V. To design a diode with hole and electron current densities 5 A/cm2 and 2 A/cm² respectively at the edges of space charge region, determine the donor concentration and acceptors concentration in n and p semiconductors of the pn junction. 25 cm?/s Dn 10 cm?/s Dp 5x10-7s 5x107s Tno Tpo 1.5x1010 cm 3 n; CSync to ch Once you upload files from your second device, click on Camera 50f065047c73f&bd: F9jdF9jaA%3D%3D&tsi=163&et=#
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